STGWA50HP65FB2

Overview

The STGWA50HP65FB2 is a high-speed IGBT from the HB2 series, utilizing trench gate field-stop technology in a TO-247 long leads package. It features a collector-emitter voltage of 650 V and a continuous collector current of 86 A at 25 °C case temperature. The device exhibits a typical saturation voltage of 1.55 V at 50 A. Total power dissipation reaches 272 W at 25 °C. It includes a co-packaged protection diode with a forward voltage of 2.6 V at 5 A. Operating junction temperature ranges from -55 °C to 175 °C.

Feature Summary

• Advanced trench gate field-stop structure optimized for low conduction losses and reduced switching energy.
• Co-packaged fast recovery diode designed for protection purposes only.
• Positive VCE(sat) temperature coefficient enabling safer parallel operation.
• Minimized tail current and tight parameter distribution.

Applications

• Welding
• Power factor correction

Procurement Notes

Verify component authenticity by checking the marking code G50HP65FB2 against official datasheet specifications. Confirm the package type matches the required TO-247 long leads configuration. Ensure thermal management solutions align with the specified junction-to-case thermal resistance values provided in the electrical ratings section.

Selection Notes

Select this component for applications requiring high efficiency and fast switching speeds within the 650 V range. The HB2 series offers improved VCE(sat) behavior at lower currents compared to previous generations. Consider the positive temperature coefficient for paralleling multiple devices to ensure balanced current sharing under varying thermal conditions.

Part Context

This part belongs to the STMicroelectronics HB2 series of 650 V IGBTs. It shares the same internal die and electrical characteristics as the STGFW50HP65FB2, which utilizes a TO-3PF package. Both variants are designed to maximize efficiency in fast-switching power conversion applications through advanced silicon technology.

Replacement Considerations

The STGFW50HP65FB2 serves as a direct functional equivalent with identical electrical performance, differing only in the physical package style (TO-3PF versus TO-247 long leads). Designers must verify mechanical fit and thermal interface requirements when substituting between these two package options.

FAQ

What is the maximum operating junction temperature?

The maximum operating junction temperature is 175 °C.

Is the co-packaged diode suitable for freewheeling?

No, the co-packaged diode is intended for protection purposes only and is not designed for standard freewheeling applications.

What is the typical turn-off switching energy at rated conditions?

At TC = 25 °C, VCC = 400 V, IC = 50 A, and RG = 4.7 Ω, the typical turn-off switching energy is 580 µJ.