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Product Detailed Parameters
- Description：IGBT TRENCH FS 600V 80A TO247
- Series：-
- Mfr：STMicroelectronics
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：80 A
- Current - Collector Pulsed (Icm)：240 A
- Vce(on) (Max) @ Vge, Ic：2.3V @ 15V, 60A
- Power - Max：375 W
- Switching Energy：1.02mJ (on), 370µJ (off)
- Input Type：Standard
- Gate Charge：314 nC
- Td (on/off) @ 25°C：35ns/190ns
- Test Condition：400V, 60A, 4.7Ohm, 15V
- Reverse Recovery Time (trr)：200 ns
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247 Long Leads
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The STGWA60V60DWFAG is an automotive-grade N-channel IGBT from the V series, utilizing a trench gate field-stop structure. It integrates a freewheeling silicon carbide (SiC) diode in a TO-247 long leads package. Key electrical ratings include a collector-emitter voltage of 600 V and a continuous collector current of 80 A at 25 °C case temperature. The device features a typical saturation voltage of 1.85 V at 60 A and supports a maximum junction temperature of 175 °C. Thermal resistance from junction to case is 0.4 °C/W for the IGBT and 0.9 °C/W for the diode.
Feature Summary
- AEC-Q101 qualified for automotive reliability standards
- Co-packaged SiC diode with no reverse recovery charge
- Tail-less switching current for reduced turn-off losses
- Positive VCE(sat) temperature coefficient enabling safe paralleling
Applications
- Automotive converters
- Totem-pole power factor correction
Procurement Notes
Verify component authenticity through authorized STMicroelectronics distribution channels. Confirm that the ordering suffix matches the specific automotive-grade variant. Ensure storage conditions remain within the specified -55 to 150 °C range prior to assembly. Check for physical damage to the TO-247 long leads package before integration into the final design.
Selection Notes
Select this component for high-frequency applications requiring optimized conduction and switching loss balance. The integrated SiC diode eliminates reverse recovery issues, making it suitable for hard-switching topologies. Consider the thermal resistance values when designing heatsinking solutions for continuous operation at elevated temperatures.
Part Context
This part belongs to the STMicroelectronics V series IGBTs, designed for very high frequency converters. It represents an evolution in trench gate field-stop technology, offering tighter parameter distributions compared to previous generations. The inclusion of the SiC diode distinguishes it from standard IGBT modules by providing superior transient robustness.
Replacement Considerations
STGWA60V60DF is a non-automotive equivalent lacking the SiC diode and AEC-Q101 qualification. Direct substitution requires re-evaluation of switching losses and thermal management due to the absence of the co-packaged free-wheeling diode.
