STGWA75H65DFB2

Overview

The STGWA75H65DFB2 is a Trench gate field-stop IGBT from the HB2 series, rated at 650 V and packaged in TO-247 long leads. It features a maximum continuous collector current of 115 A at TC = 25 °C and a typical saturation voltage of 1.55 V at IC = 75 A. The device includes a co-packaged antiparallel diode with a forward on-voltage of 1.8 V at IF = 75 A. Total power dissipation reaches 357 W at TC = 25 °C, supported by a junction-to-case thermal resistance of 0.42 °C/W for the IGBT. Operating junction temperature ranges from -55 °C to 175 °C.

Feature Summary

• Evolution of proprietary trench gate field-stop structure optimized for conduction and switching energy reduction
• Co-packaged very fast soft recovery diode designed to maximize efficiency in high-speed applications
• Positive VCE(sat) temperature coefficient ensuring stable parallel operation

Applications

• Welding equipment
• Single-phase input PFC converters
• String and central solar inverters
• Uninterruptible power supplies (UPS)
• DC fast charging stations for electric vehicles

Procurement Notes

Verify the specific datasheet revision against the manufacturer's official website before finalizing designs. Confirm that the TO-247 long leads package dimensions match the target PCB footprint requirements. Ensure thermal management solutions account for the specified junction-to-case thermal resistance values under actual operating conditions.

Selection Notes

Select this component when designing circuits requiring high-speed switching capabilities combined with low conduction losses at moderate currents. The integrated fast-recovery diode simplifies circuit topology for applications like inverters and converters. Evaluate thermal performance based on the provided safe operating area curves and power dissipation limits at expected case temperatures.

Part Context

This part belongs to the STMicroelectronics HB2 series, representing an evolution of their advanced trench gate field-stop technology. The series focuses on optimizing both conduction characteristics and switching energy to improve overall system efficiency. It serves as a specialized solution for demanding power conversion environments where speed and thermal stability are critical design parameters.

Replacement Considerations

Check for other parts within the same HB2 family or previous generations if pin compatibility is required. Verify that any substitute maintains the 650 V rating and similar thermal resistance characteristics. Ensure the alternative device supports the necessary switching frequencies and current ratings for the specific application.