ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：IGBT TRENCH FS 1250V 60A TO-3P
- Series：-
- Mfr：STMicroelectronics
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：1250 V
- Current - Collector (Ic) (Max)：60 A
- Current - Collector Pulsed (Icm)：120 A
- Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 25A
- Power - Max：375 W
- Switching Energy：720µJ (off)
- Input Type：Standard
- Gate Charge：114 nC
- Td (on/off) @ 25°C：-/128ns
- Test Condition：600V, 25A, 10Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-3P-3, SC-65-3
- Supplier Device Package：TO-3P
- Grade：-
- Qualification：-
Download product information
Overview
The STGWT28IH125DF is a single-channel silicon Insulated Gate Bipolar Transistor (IGBT) from the IH series, manufactured by STMicroelectronics. It utilizes an advanced trench gate field-stop structure to optimize conduction and switching performance. The device features a co-packaged freewheeling diode with low forward voltage drop. Rated for a maximum collector-emitter voltage of 1250 V, it supports a continuous collector current of 30 A at 25°C and a peak current of 60 A. The saturation voltage is typically 2.0 V at 25 A. It operates within a junction temperature range up to 175°C and is housed in a lead-free TO-247-3 through-hole package.
Feature Summary
- Advanced trench gate field-stop technology minimizes tail current and optimizes efficiency for resonant and soft-switching applications.
- Integrated freewheeling diode with low forward voltage and soft recovery characteristics enhances overall system performance.
- Tight parameter distribution ensures safe paralleling capabilities for high-power designs.
- Designed specifically for soft commutation environments to maximize reliability.
Applications
- Resonant converter topologies
- Soft-switching power supplies
- High-efficiency motor drives
Procurement Notes
Verify the exact part number suffix against official manufacturer documentation, as variations may exist between similar model designations. Confirm RoHS compliance status and specific thermal resistance values required for your heatsink design prior to ordering. Ensure that the procurement channel provides genuine components with traceable manufacturing dates to guarantee quality and reliability standards are met.
Selection Notes
Select this component for applications requiring high voltage blocking capability combined with low switching losses. The integrated diode simplifies circuit design by reducing external component count. Ensure the application environment strictly adheres to soft commutation requirements, as the device is not optimized for hard switching scenarios. Verify that the thermal management system can handle the specified power dissipation at the intended operating junction temperature.
Part Context
This IGBT belongs to the IH series, which focuses on high-efficiency solutions using proprietary trench gate field-stop technology. It is distinct from standard IGBTs by its optimized tail current reduction and co-packaged diode integration. The series targets modern power electronics demanding higher density and improved energy efficiency in resonant and soft-switching architectures.
Replacement Considerations
Direct substitutes must match the 1250V rating, TO-247-3 package, and integrated diode configuration. Compare key parameters such as Vce(sat), switching times, and thermal resistance. Verify compatibility with existing gate drive circuits and ensure the replacement supports soft commutation only.
