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The STGWT30HP65FB is an obsolete N-channel Insulated Gate Bipolar Transistor (IGBT) from the HB series, manufactured by STMicroelectronics. It utilizes a proprietary trench gate field-stop structure to optimize efficiency in frequency converters. The device features a maximum collector-emitter voltage of 650 V and a continuous collector current of 30 A. Key electrical parameters include a typical saturation voltage of 1.6 V at 40 A and a maximum junction temperature of 175 °C. It is housed in a TO-247 package with long leads for through-hole mounting.
This component belongs to the HB series of IGBTs, representing an evolution of ST's trench gate technology. While the specific part number STGWT30HP65FB is marked as obsolete, it shares architectural similarities with active variants like the STGWA30HP65FB2 within the broader high-speed IGBT portfolio designed for industrial power conversion.
As the STGWT30HP65FB is obsolete, designers should evaluate active alternatives such as the STGWA30HP65FB2 or other members of the HB2 series. Verify that the replacement maintains compatibility with existing thermal management solutions and gate drive requirements while meeting the original circuit's voltage and current specifications.