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The STGWT40H60DLFB is a single N-channel Insulated Gate Bipolar Transistor (IGBT) from the HB series, manufactured by STMicroelectronics. It utilizes a trench gate field-stop structure and is housed in a TO-247 package for through-hole mounting. The device supports a maximum collector-emitter voltage of 600 V and a continuous collector current of 80 A at 25°C. Typical saturation voltage is 1.6 V at 40 A. It operates within a junction temperature range of -55°C to +175°C with a power dissipation rating of 283 W.
Verify component authenticity via manufacturer channels due to potential counterfeits. Confirm RoHS compliance status as indicated in official documentation. Check for end-of-life notices or production change notifications prior to final design commitment.
Select this IGBT for designs requiring high switching speeds and low conduction losses. Ensure thermal management solutions accommodate the 283 W power dissipation. Verify gate drive requirements align with the specified voltage limits.
Part of the HB series IGBTs designed for efficiency in frequency converters. Combines low saturation voltage with fast switching characteristics. Suitable for industrial applications demanding robust performance and reliable operation under high stress conditions.
Direct substitutes include STGW40H60DFB and STGWA40H60DFB. Verify pinout compatibility and thermal resistance values before substitution.