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Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 80A TO-3P
- Series：-
- Mfr：STMicroelectronics
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：80 A
- Current - Collector Pulsed (Icm)：160 A
- Vce(on) (Max) @ Vge, Ic：2.3V @ 15V, 40A
- Power - Max：283 W
- Switching Energy：498mJ (on), 363mJ (off)
- Input Type：Standard
- Gate Charge：210 nC
- Td (on/off) @ 25°C：40ns/142ns
- Test Condition：400V, 40A, 5Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-3P-3, SC-65-3
- Supplier Device Package：TO-3P
- Grade：-
- Qualification：-
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Overview
The STGWT40H65FB is an N-channel Insulated Gate Bipolar Transistor manufactured by STMicroelectronics. It features a maximum continuous collector current of 80 A and a maximum collector-emitter voltage of 650 V. The device is housed in a TO-3P package designed for through-hole mounting. Key electrical parameters include a maximum power dissipation of 283 W, a maximum collector-emitter saturation voltage of 2.3 V, and a maximum gate-emitter voltage of ±20 V. It operates within a temperature range of -55 °C to +175 °C and supports switching speeds up to 1 MHz.
Feature Summary
- Utilizes Trench Gate Field-Stop technology for optimized performance
- Designed for high-speed switching applications with minimized tail current
- Features tight parameter distribution for safer paralleling operation
Applications
- High-efficiency frequency converters
- Industrial motor drives
- Uninterruptible power supplies (UPS)
- Welding equipment
Procurement Notes
Verify the specific suffix 'FB' against the manufacturer's official datasheet to confirm pinout configuration and internal diode characteristics. Ensure the TO-3P package dimensions match the target PCB footprint. Confirm RoHS compliance status if required by local regulations. Cross-reference the part number with authorized distributors to avoid counterfeit components.
Selection Notes
Select this component when a high-voltage IGBT with robust current handling is required for industrial power conversion. The TO-3P package facilitates efficient heat sinking compared to surface-mount alternatives. Consider the thermal resistance and saturation voltage trade-offs against other HB series variants based on the specific switching frequency and conduction loss requirements of the design.
Part Context
This device belongs to the HB series of IGBTs from STMicroelectronics. The series is engineered to balance conduction and switching losses, maximizing efficiency in frequency converters. The trench gate field-stop structure provides improved switching speed and reduced tail current compared to standard planar technologies.
Replacement Considerations
Compatible substitutes within the same family include STGW40H65FB and STGB40H65FB. Verify that alternative packages or suffixes maintain identical pin configurations and electrical ratings before substitution.
