STGWT40HP65FB

$3.01

Description：IGBT TRENCH FS 650V 80A TO-3P
Series：HB

SKU:9627c7da2295 Category: Single IGBTs Brand: STMicroelectronics

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Product introduction

Product Detailed Parameters

Description：IGBT TRENCH FS 650V 80A TO-3P
Series：HB
Mfr：STMicroelectronics
Package：Tube
IGBT Type：Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)：650 V
Current - Collector (Ic) (Max)：80 A
Current - Collector Pulsed (Icm)：160 A
Vce(on) (Max) @ Vge, Ic：2V @ 15V, 40A
Power - Max：283 W
Switching Energy：363µJ (off)
Input Type：Standard
Gate Charge：210 nC
Td (on/off) @ 25°C：-/142ns
Test Condition：400V, 40A, 5Ohm, 15V
Reverse Recovery Time (trr)：140 ns
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-3P-3, SC-65-3
Supplier Device Package：TO-3P
Grade：-
Qualification：-

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STGWT40HP65FB

Overview

The STGWT40HP65FB is a high-speed IGBT from the HB series, utilizing an advanced trench gate field-stop structure. It features a 650 V collector-emitter voltage and a 40 A continuous collector current in a TO-247 package. The device exhibits a typical saturation voltage of 1.6 V at 40 A and supports a maximum junction temperature of 175 °C. It includes a co-packaged protection diode and offers low thermal resistance with minimized tail current for efficient switching.

Feature Summary

Advanced trench gate field-stop technology for optimized conduction and switching performance
Co-packaged antiparallel diode designed for protection purposes
Positive VCE(sat) temperature coefficient enabling safer paralleling operation
Tight parameter distribution ensuring consistent device characteristics

Applications

Frequency converters
Motor control inverters
High-efficiency power supplies

Procurement Notes

Verify the specific suffix 'FB' against the manufacturer's datasheet to confirm pinout and packaging details. Ensure the ordering part number matches the exact electrical ratings required for the target application circuit design.

Selection Notes

Select this component when a balance between low conduction loss and fast switching speed is required. The positive temperature coefficient aids in parallel configurations, while the integrated diode simplifies circuit topology for inductive load driving.

Part Context

This model belongs to STMicroelectronics' HB series of IGBTs. It shares the core trench gate field-stop architecture with variants like STGWA40H65DFB but differs in specific packaging or diode integration options defined by the suffix codes within the product family.

Replacement Considerations

Direct substitutes include STGWA40H65DFB and STGWT40H65FB. Verify that the replacement maintains the same TO-247 footprint and electrical parameters before implementation.

How to buy

Online and offline orders are supported. If the item is available for online purchase, you can place it in the cart; for wholesale pricing, please contact our product manager for a quote.

Payment Method

Payment methods: T/T, WeChat Pay, credit cards, Google Pay, Apple Pay . Buyer covers shipping, fees, duties, and taxes; contact our product manager if you need a contract/procurement process.

Delivery time

In-stock items usually ship within 24 hours. Otherwise, shipment is arranged 1 to 2 days after the items arrive at our warehouse. Timing depends on destination and shipping method.

Freight calculation

Freight cost depends on destination, package size, and weight . We offer shipping options via DHL, FedEx, UPS, and TNT , and can ship using your freight account upon request.

Mode of Transportation

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Return and Refund

Returns are accepted within 60 days of invoice with RMA approval. Items must be resalable; original invoice and test report are required. No returns for customer errors.