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Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 80A TO-3P
- Series：-
- Mfr：STMicroelectronics
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：80 A
- Current - Collector Pulsed (Icm)：240 A
- Vce(on) (Max) @ Vge, Ic：2.3V @ 15V, 60A
- Power - Max：375 W
- Switching Energy：1.09mJ (on), 626µJ (off)
- Input Type：Standard
- Gate Charge：306 nC
- Td (on/off) @ 25°C：51ns/160ns
- Test Condition：400V, 60A, 5Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-3P-3, SC-65-3
- Supplier Device Package：TO-3P
- Grade：-
- Qualification：-
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Overview
The STGWT60H65FB is a trench gate field-stop IGBT from the HB series, rated at 650 V and 60 A. It features a maximum junction temperature of 175 °C and a typical saturation voltage of 1.6 V at 60 A. The device utilizes an advanced proprietary structure to optimize efficiency in frequency converters. Key electrical characteristics include minimized tail current and low thermal resistance. It is designed for high-speed switching applications with very fast soft recovery antiparallel diode integration.
Feature Summary
- Advanced trench gate field-stop structure for optimized conduction and switching loss
- Positive VCE(sat) temperature coefficient enabling safer paralleling operation
- Very fast soft recovery antiparallel diode integrated with the IGBT
Applications
- Frequency converters
- High speed switching circuits
- Power conversion systems requiring efficient paralleling
Procurement Notes
Verify the exact part number suffix against official STMicroelectronics documentation to ensure correct specifications. Confirm RoHS compliance status directly from the manufacturer's datasheet or authorized distributor catalogs before procurement. Ensure the component meets the required thermal and electrical ratings for the specific application environment.
Selection Notes
Select this component when designing high-efficiency frequency converters that require a balance between conduction and switching losses. The positive temperature coefficient of VCE(sat) makes it suitable for parallel configurations where current sharing is critical. Consider the 175 °C maximum junction temperature for high-temperature operational environments.
Part Context
This device belongs to the HB series of IGBTs developed by STMicroelectronics. The series represents an optimum compromise between conduction and switching loss to maximize efficiency in any frequency converter. The tight parameter distribution ensures consistent performance across devices within the same batch.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided source material. Verify compatibility with existing circuit designs if considering alternative components from other manufacturers.
