STGWT80V60DF

Overview

The STGWT80V60DF is an N-channel IGBT from the V series, utilizing a trench gate field-stop structure. It features a maximum collector-emitter voltage of 600 V and a continuous collector current of 80 A. The device operates with a maximum junction temperature of 175 °C and a typical saturation voltage of 1.85 V at 80 A. Packaged in TO-247 for through-hole mounting, it supports switching frequencies up to 1 MHz. Key electrical limits include a maximum power dissipation of 469 W and a gate-emitter voltage range of -20 V to +20 V.

Feature Summary

• Trench gate field-stop technology for optimized conduction and switching performance
• Positive VCE(sat) temperature coefficient enabling safe parallel operation
• Tail-less switching off characteristics for reduced switching losses
• Integrated fast soft recovery antiparallel diode

Applications

• Very high frequency converters
• Industrial motor drives
• Uninterruptible power supplies (UPS)
• High-efficiency power factor correction circuits

Procurement Notes

Verify the specific suffix 'DF' against the manufacturer's official datasheet to confirm pinout configuration and packaging details. Ensure the ordering part number matches the exact current rating required, as variations exist within the V series family. Cross-reference the component marking on the physical device with the official documentation to prevent substitution errors during assembly.

Selection Notes

Select this component when designing circuits requiring high efficiency at very high switching frequencies. The tight parameter distribution makes it suitable for applications demanding precise paralleling of multiple devices. Consider the thermal resistance and package type TO-247 for appropriate heatsinking solutions to maintain the junction temperature within the specified 175 °C limit under full load conditions.

Part Context

This IGBT belongs to the V series developed by STMicroelectronics, which focuses on balancing conduction and switching losses. It shares the same trench gate field-stop architecture as other models like the STGW60V60DF and STGB30V60DF, differing primarily in current handling capabilities. The series is engineered to maximize converter efficiency in demanding power electronics applications.

Replacement Considerations

Direct replacements within the same series include STGW60V60DF or STGB30V60DF if lower current ratings are acceptable. Verify that any substitute maintains the TO-247 package and identical pinout configuration. Ensure the alternative device meets the 600 V blocking voltage and 175 °C junction temperature requirements.