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Product Detailed Parameters
- Description：IGBT TRENCH FS 600V 120A TO-3P
- Series：-
- Mfr：STMicroelectronics
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：120 A
- Current - Collector Pulsed (Icm)：240 A
- Vce(on) (Max) @ Vge, Ic：2.3V @ 15V, 80A
- Power - Max：469 W
- Switching Energy：1.8mJ (on), 1mJ (off)
- Input Type：Standard
- Gate Charge：448 nC
- Td (on/off) @ 25°C：60ns/220ns
- Test Condition：400V, 80A, 10Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-3P-3, SC-65-3
- Supplier Device Package：TO-3P
- Grade：-
- Qualification：-
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Overview
The STGWT80V60F is a single N-channel Insulated Gate Bipolar Transistor (IGBT) from the V series, utilizing Trench Gate Field Stop technology. It features a maximum collector-emitter voltage of 600 V and a continuous collector current of 120 A at 25°C. The device operates with a maximum power dissipation of 469 W and a saturation voltage of 2.3 V. It is housed in a TO-247 package for through-hole mounting, supporting a junction temperature up to 175°C and switching speeds up to 1 MHz.
Feature Summary
- Advanced proprietary trench gate field-stop structure for optimized efficiency
- Tail-less switching off behavior minimizing tail current
- Positive VCE(sat) temperature coefficient enabling safe paralleling operation
- Very fast soft recovery antiparallel diode integrated within the package
Applications
- High frequency converters
- Industrial motor drives
- Uninterruptible power supplies (UPS)
- Switched-mode power supplies (SMPS)
Procurement Notes
Verify the exact suffix against official STMicroelectronics documentation, as datasheets often list variants like STGWT80V60DF or STGWT80H60DFB. Confirm that the specific part number matches the required packaging and electrical tolerances before procurement. Cross-reference the manufacturer's latest release notes to ensure component availability and compliance with current industry standards.
Selection Notes
Select this component when high switching frequencies and low conduction losses are critical. The positive temperature coefficient facilitates parallel connection for higher current handling without complex balancing circuits. Ensure the thermal management design accommodates the specified power dissipation and junction temperature limits for reliable long-term operation.
Part Context
This IGBT belongs to the V series, designed to balance conduction and switching losses for high-frequency applications. It utilizes silicon technology and is distinct from other series such as the HB series, which targets different performance compromises. The TO-247 package provides robust mechanical stability and efficient heat dissipation capabilities.
Replacement Considerations
Direct substitutes include STGWT80V60DF and STGWT80H60DFB. Verify pinout compatibility and thermal resistance specifications before substitution. Ensure the alternative part meets the same voltage and current ratings to maintain system integrity.
