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The STGY80H65DFB is a high-speed N-channel IGBT from the HB series, utilizing trench gate field-stop technology. It features a Max247 package with collector-emitter voltage of 650 V and continuous collector current of 120 A at 25 °C case temperature. The typical saturation voltage is 1.6 V at 80 A. Total power dissipation reaches 469 W at 25 °C. Thermal resistance junction-to-case is 0.32 °C/W for the IGBT and 0.66 °C/W for the diode. Operating junction temperature spans -55 to 175 °C.
Verify the specific Max247 package designation against the datasheet Table 1 to ensure correct physical form factor. Confirm environmental compliance requirements match the ECOPACK specifications provided by the manufacturer before finalizing orders.
Select this component for applications requiring high-speed switching and low tail current. Ensure thermal management design accommodates the specified junction-to-case thermal resistance values. Verify that the operating voltage does not exceed the 650 V collector-emitter rating under all transient conditions.
This device belongs to the HB series alongside STGW80H65DFB, STGWA80H65DFB, and STGWT80H65DFB. These variants share identical electrical performance but differ in mechanical packaging configurations including TO-247, TO-247 long leads, and TO-3P.
Direct substitutes within the same family include STGW80H65DFB, STGWA80H65DFB, and STGWT80H65DFB. Selection depends on matching the required mechanical package type while maintaining identical electrical parameters.
The maximum continuous collector current is 120 A at a case temperature of 25 °C and 80 A at a case temperature of 100 °C.
The device features a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution, which result in safer paralleling operation.
At TJ = 175 °C, with VCC = 400 V, IC = 80 A, and RG = 10 Ω, the total switching loss (Ets) is typically 6.5 mJ.