STGY80H65DFB

STGY80H65DFB

$13.14
  • Description:IGBT TRENCH FS 650V 120A MAX247
  • Series:-

SKU:8ac8f10a0307 Category: Brand:

  
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Product Detailed Parameters

  • Description:IGBT TRENCH FS 650V 120A MAX247
  • Series:-
  • Mfr:STMicroelectronics
  • Package:Tube
  • IGBT Type:Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max):650 V
  • Current - Collector (Ic) (Max):120 A
  • Current - Collector Pulsed (Icm):240 A
  • Vce(on) (Max) @ Vge, Ic:2V @ 15V, 80A
  • Power - Max:469 W
  • Switching Energy:2.1mJ (on), 1.5mJ (off)
  • Input Type:Standard
  • Gate Charge:414 nC
  • Td (on/off) @ 25°C:84ns/280ns
  • Test Condition:400V, 80A, 10Ohm, 15V
  • Reverse Recovery Time (trr):85 ns
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-247-3
  • Supplier Device Package:MAX247™
  • Grade:-
  • Qualification:-

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STGY80H65DFB

Overview

The STGY80H65DFB is a high-speed N-channel IGBT from the HB series, utilizing trench gate field-stop technology. It features a Max247 package with collector-emitter voltage of 650 V and continuous collector current of 120 A at 25 °C case temperature. The typical saturation voltage is 1.6 V at 80 A. Total power dissipation reaches 469 W at 25 °C. Thermal resistance junction-to-case is 0.32 °C/W for the IGBT and 0.66 °C/W for the diode. Operating junction temperature spans -55 to 175 °C.

Feature Summary

  • Advanced trench gate field-stop structure optimizes efficiency in frequency converters by balancing conduction and switching losses.
  • Slightly positive VCE(sat) temperature coefficient combined with tight parameter distribution ensures safe paralleling operation.
  • Integrated antiparallel diode provides very fast soft recovery characteristics.

Applications

  • Photovoltaic inverters
  • High frequency converters

Procurement Notes

Verify the specific Max247 package designation against the datasheet Table 1 to ensure correct physical form factor. Confirm environmental compliance requirements match the ECOPACK specifications provided by the manufacturer before finalizing orders.

Selection Notes

Select this component for applications requiring high-speed switching and low tail current. Ensure thermal management design accommodates the specified junction-to-case thermal resistance values. Verify that the operating voltage does not exceed the 650 V collector-emitter rating under all transient conditions.

Part Context

This device belongs to the HB series alongside STGW80H65DFB, STGWA80H65DFB, and STGWT80H65DFB. These variants share identical electrical performance but differ in mechanical packaging configurations including TO-247, TO-247 long leads, and TO-3P.

Replacement Considerations

Direct substitutes within the same family include STGW80H65DFB, STGWA80H65DFB, and STGWT80H65DFB. Selection depends on matching the required mechanical package type while maintaining identical electrical parameters.

FAQ

What is the maximum continuous collector current?

The maximum continuous collector current is 120 A at a case temperature of 25 °C and 80 A at a case temperature of 100 °C.

How does the device handle paralleling?

The device features a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution, which result in safer paralleling operation.

What is the total switching loss at 175 °C?

At TJ = 175 °C, with VCC = 400 V, IC = 80 A, and RG = 10 Ω, the total switching loss (Ets) is typically 6.5 mJ.

STGY80H65DFBSTGY80H65DFB
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