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Product Detailed Parameters
- Description：IGBT TRENCH FS 1200V 100A TO-247
- Series：-
- Mfr：STMicroelectronics
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：100 A
- Current - Collector Pulsed (Icm)：200 A
- Vce(on) (Max) @ Vge, Ic：2.6V @ 15V, 50A
- Power - Max：535 W
- Switching Energy：2mJ (on), 2.1mJ (off)
- Input Type：Standard
- Gate Charge：210 nC
- Td (on/off) @ 25°C：40ns/284ns
- Test Condition：600V, 50A, 10Ohm, 15V
- Reverse Recovery Time (trr)：340 ns
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247
- Grade：-
- Qualification：-
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Overview
The STGYA50H120DF2 is a high-speed IGBT from the H series, utilizing an advanced trench gate field-stop structure. It features a collector-emitter voltage of 1200 V and a continuous collector current of 50 A at TC = 100 °C (100 A at TC = 25 °C). The device offers a typical saturation voltage of 2.1 V at IC = 50 A and supports a maximum junction temperature of 175 °C. It provides a short-circuit withstand time of 5 μs and includes a very fast recovery antiparallel diode.
Feature Summary
- Advanced trench gate field-stop technology for optimized switching performance
- Positive VCE(sat) temperature coefficient for safe paralleling operation
- Tight parameter distribution across manufacturing batches
- Integrated very fast recovery antiparallel diode
Applications
- Uninterruptible power supplies (UPS)
- Solar inverters
- Welding equipment
- Power factor correction (PFC)
Procurement Notes
Verify the specific ordering code STGYA50H120DF2 against the manufacturer's official documentation to ensure correct component identification. Confirm that the Max247 long leads package matches the required mechanical footprint and lead configuration for the target printed circuit board design before finalizing procurement.
Selection Notes
Select this component when designing circuits requiring high switching frequencies and low conduction losses within the 1200 V range. Ensure the thermal management system can handle the specified power dissipation and maintain the junction temperature below 175 °C under worst-case operating conditions.
Part Context
This device belongs to the STMicroelectronics H series of trench gate field-stop IGBTs. It is designed to provide an optimum compromise between conduction and switching losses, maximizing efficiency in high-frequency converters compared to standard industry alternatives.
Replacement Considerations
Direct substitutes include other STMicroelectronics H series devices with matching ratings, such as STGW50H120DF2 or STGWA50H120DF2. Verify pinout compatibility and thermal resistance specifications before substituting.
