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STH65N050DM9-7AG is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists STMicroelectronics. Its product description is AUTOMOTIVE-GRADE N-CHANNEL 650 V. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for STH65N050DM9-7AG
- Description：AUTOMOTIVE-GRADE N-CHANNEL 650 V
- Series：ECOPACK®
- Mfr：STMicroelectronics
- Package：Cut Tape (CT),-
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：650 V
- Current - Continuous Drain (Id) @ 25°C：51A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：50mOhm @ 25.5A, 10V
- Vgs(th) (Max) @ Id：4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：100 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：4680 pF @ 400 V
- FET Feature：-
- Power Dissipation (Max)：266W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：H2PAK-7
- Package / Case：TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Single FETs, MOSFETs datasheet and documents for STH65N050DM9-7AG
Single FETs, MOSFETs Overview
The STH65N050DM9-7AG is an automotive-grade N-channel Power MOSFET utilizing STMicroelectronics' MDmesh DM9 super-junction technology. It features a 650 V drain-source voltage rating and a typical on-resistance of 38 mOhm at 10 V gate drive. The device supports a continuous drain current of 51 A and offers a power dissipation capacity of 266 W. Packaged in a 7-pin H2PAK-7, it operates within a temperature range of -50°C to +150°C and holds AEC-Q101 qualification for automotive reliability.
Single FETs, MOSFETs Feature Summary
- Based on innovative MDmesh DM9 super-junction technology for medium/high voltage applications
- Automotive-grade construction with AEC-Q101 qualification
- Optimized for low conduction losses via ultra-low on-resistance
Single FETs, MOSFETs Applications
- Automotive power management systems
- High-efficiency DC-DC converters
- Motor control circuits
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix matches the required package and tape/reel configuration. Confirm that the component meets the necessary AEC-Q101 standards for your target automotive application. Check the manufacturer's latest datasheet for any updates regarding pinout or thermal characteristics before finalizing design integration.
Single FETs, MOSFETs Selection Notes
Select this component when high voltage isolation and low conduction loss are critical. The MDmesh DM9 technology provides superior performance compared to standard planar MOSFETs. Ensure the thermal design accommodates the 266 W dissipation rating and that the gate drive voltage aligns with the 38 mOhm resistance specification.
Single FETs, MOSFETs Part Context
This part belongs to the MDmesh DM9 series from STMicroelectronics, designed for advanced power switching. It represents a generation of super-junction MOSFETs optimized for efficiency and density. The H2PAK-7 package provides robust mechanical stability and thermal performance suitable for demanding industrial and automotive environments.
Single FETs, MOSFETs Replacement Considerations
Direct substitutes must match the 650 V rating, 51 A current, and H2PAK-7 package. Verify compatibility with existing PCB footprints and thermal management solutions. Cross-reference electrical parameters such as Rds(on) and Qg to ensure equivalent switching performance.
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