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The STL38DN6F7AG is an automotive-grade N-channel Power MOSFET utilizing STripFET F7 technology. It features a 60 V drain-source voltage rating and a maximum continuous drain current of 10 A at 25 °C case temperature. The device offers a typical on-state resistance (RDS(on)) of 24 mΩ, with a maximum limit of 27 mΩ at VGS = 10 V and ID = 5 A. Packaged in a PowerFLAT 5x6 double island configuration, it provides a thermal resistance junction-to-case of 2.6 °C/W. Key electrical parameters include a total gate charge of 7.9 nC and a breakdown voltage of 60 V.
Verify the specific revision status and environmental compliance grade before ordering. Confirm that the PowerFLAT 5x6 double island footprint matches the design layout requirements. Ensure thermal management strategies align with the specified junction-to-case thermal resistance values for the intended operating environment.
Select this component when automotive qualification and high efficiency are required. The low RDS(on) minimizes conduction losses, while the optimized gate charge supports high-frequency switching. Consider the 60 V rating and 10 A current capability against the specific load requirements and thermal constraints of the target application.
This device belongs to the STripFET F7 series of low-voltage MOSFETs from STMicroelectronics. The series utilizes enhanced trench-gate technology to achieve superior performance metrics compared to previous generations. It is designed for applications demanding high power density and efficiency in compact packages.
Consult official STMicroelectronics documentation for verified cross-reference part numbers. Ensure any substitute maintains equivalent voltage, current, and package specifications.
The maximum pulsed drain current (IDM) is 40 A, limited by the safe operating area.
Yes, the device is AEC-Q101 qualified for automotive applications.
The reverse transfer capacitance (Crss) is typically 7.9 pF at VDS = 25 V and f = 1 MHz.