STL38DN6F7AG

STL38DN6F7AG

$0.44
  • Description:MOSFET 2N-CH 60V 10A POWERFLAT
  • Series:STripFET™ F7

SKU:b448e24c1189 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 2N-CH 60V 10A POWERFLAT
  • Series:STripFET™ F7
  • Mfr:STMicroelectronics
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:-
  • Drain to Source Voltage (Vdss):60V
  • Current - Continuous Drain (Id) @ 25°C:10A (Tc)
  • Rds On (Max) @ Id, Vgs:27mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id:4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:7.9nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:380pF @ 25V
  • Power - Max:57.7W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-PowerVDFN
  • Supplier Device Package:PowerFlat™ (5x6)
  • Grade:Automotive
  • Qualification:AEC-Q101

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STL38DN6F7AG

Overview

The STL38DN6F7AG is an automotive-grade N-channel Power MOSFET utilizing STripFET F7 technology. It features a 60 V drain-source voltage rating and a maximum continuous drain current of 10 A at 25 °C case temperature. The device offers a typical on-state resistance (RDS(on)) of 24 mΩ, with a maximum limit of 27 mΩ at VGS = 10 V and ID = 5 A. Packaged in a PowerFLAT 5x6 double island configuration, it provides a thermal resistance junction-to-case of 2.6 °C/W. Key electrical parameters include a total gate charge of 7.9 nC and a breakdown voltage of 60 V.

Feature Summary

  • AEC-Q101 qualified for automotive reliability standards
  • Enhanced trench gate structure for low on-state resistance and fast switching
  • Optimized capacitance ratio to improve electromagnetic interference immunity
  • High avalanche ruggedness for robust operation under transient conditions

Applications

  • General switching applications
  • Automotive power management circuits
  • Low-voltage motor control systems

Procurement Notes

Verify the specific revision status and environmental compliance grade before ordering. Confirm that the PowerFLAT 5x6 double island footprint matches the design layout requirements. Ensure thermal management strategies align with the specified junction-to-case thermal resistance values for the intended operating environment.

Selection Notes

Select this component when automotive qualification and high efficiency are required. The low RDS(on) minimizes conduction losses, while the optimized gate charge supports high-frequency switching. Consider the 60 V rating and 10 A current capability against the specific load requirements and thermal constraints of the target application.

Part Context

This device belongs to the STripFET F7 series of low-voltage MOSFETs from STMicroelectronics. The series utilizes enhanced trench-gate technology to achieve superior performance metrics compared to previous generations. It is designed for applications demanding high power density and efficiency in compact packages.

Replacement Considerations

Consult official STMicroelectronics documentation for verified cross-reference part numbers. Ensure any substitute maintains equivalent voltage, current, and package specifications.

FAQ

What is the maximum pulsed drain current for the STL38DN6F7AG?

The maximum pulsed drain current (IDM) is 40 A, limited by the safe operating area.

Does the STL38DN6F7AG meet automotive standards?

Yes, the device is AEC-Q101 qualified for automotive applications.

What is the reverse transfer capacitance value?

The reverse transfer capacitance (Crss) is typically 7.9 pF at VDS = 25 V and f = 1 MHz.

STL38DN6F7AGSTL38DN6F7AG
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