STL65DN3LLH5

Overview

The STL65DN3LLH5 is a dual N-channel Power MOSFET developed using STMicroelectronics’ STripFET™ V technology. It features a typical on-state resistance of 0.0059 Ohms and supports a continuous drain current of 19 A at a 30 V drain-source voltage. The device utilizes a PowerFLAT 5x6 double island package, offering low gate drive power loss and high avalanche ruggedness. Key electrical parameters include a maximum gate-source voltage of ±22 V, a gate charge of 12 nC at 4.5 V, and an input capacitance of 1500 pF at 25 V. It operates within a temperature range of -55°C to +150°C junction temperature.

Feature Summary

• Dual N-channel configuration in a compact PowerFLAT 5x6 double island package
• Optimized for very low on-state resistance contributing to industry benchmark Figure of Merit
• High avalanche ruggedness with low switching gate charge for efficient operation

Applications

• Automotive-grade power management systems
• DC-DC converter circuits requiring low conduction losses
• Motor control applications benefiting from high ruggedness

Procurement Notes

Verify the specific revision and lot traceability against the official STMicroelectronics datasheet before integration. Confirm that the PowerFLAT 5x6 double island package dimensions match your PCB footprint requirements precisely. Ensure thermal management strategies account for the 60 W power dissipation rating under actual operating conditions. Cross-reference the AEC-Q101 qualification status if automotive reliability standards are mandatory for the end application.

Selection Notes

Select this component when a dual N-channel topology is required within a small form factor. The low Rds(on) makes it suitable for high-efficiency power conversion where conduction losses dominate. Consider the 19 A current rating relative to peak load demands and ambient thermal conditions. The STripFET V technology provides a balance between switching speed and conduction efficiency compared to older generations.

Part Context

This part belongs to the STL series of Power MOSFETs utilizing STripFET V technology. It complements single-channel variants like the STD65N3LLH5 by providing two channels in one package. The family focuses on minimizing the Figure of Merit (Rds(on) * Qg) for improved system efficiency. It is designed for applications demanding high power density and robust performance in constrained spaces.

Replacement Considerations

Direct substitutes may include other dual N-channel 30 V MOSFETs in similar packages, such as the STL66DN3LLH5. Verify pin compatibility and thermal characteristics when swapping components. Ensure the replacement maintains the required avalanche energy rating and gate charge specifications for the specific circuit design.