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Product Detailed Parameters
- Description：MOSFET 2N-CH 60V 20A POWERFLAT
- Series：STripFET™ III
- Mfr：STMicroelectronics
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：20A
- Rds On (Max) @ Id, Vgs：30mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：13nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：668pF @ 25V
- Power - Max：65W
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerVDFN
- Supplier Device Package：PowerFlat™ (5x6)
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The STL8DN6LF3 is an automotive-grade dual N-channel Power MOSFET developed using STripFET F3 technology. It features a 100 V breakdown voltage and a typical on-resistance of 25 mOhm, supporting a continuous current of 7.8 A. The device is housed in a compact PowerFLAT 5x6 double island package with wettable flanks. Key electrical characteristics include a logic-level gate threshold voltage, a maximum junction temperature of 175 °C, and 100% avalanche rating capability.
Feature Summary
- AEC-Q101 qualified for automotive reliability standards
- STripFET F3 technology minimizes on-resistance and gate charge
- Wettable flank package facilitates visual inspection of solder joints
Applications
- Automotive power distribution systems
- High-side or low-side load switching applications
- DC motor control circuits requiring high ruggedness
Procurement Notes
Verify the specific ordering suffix to confirm the exact tape-and-reel quantity and packaging variant. Confirm that the component meets the required AEC-Q101 grade specifications for the target automotive application environment. Ensure the PowerFLAT 5x6 footprint matches the design layout constraints.
Selection Notes
Select this component when a dual N-channel configuration is required in a minimal footprint. The 100 V rating suits medium-voltage automotive bus architectures. The 175 °C junction temperature capability allows operation in high-thermal environments where standard industrial parts may fail.
Part Context
This part belongs to STMicroelectronics' STripFET F3 family of automotive-grade power MOSFETs. It shares the same package and core technology as the STL7N6LF3 but offers higher voltage and current ratings suitable for more demanding power switching tasks in vehicle electronics.
Replacement Considerations
The STL7N6LF3 is a similar single-channel device in the same package family but with lower voltage and current ratings. Direct substitution requires verifying if the reduced 60 V / 6.5 A specs meet the circuit requirements.
