SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
STL8DN6LF6AG is an automotive-grade N-channel Power MOSFET from STMicroelectronics, utilizing STripFET H6 technology. It features a 60 V drain-source voltage rating and a typical on-resistance of 1.5 mOhm at 10 V gate drive. The device supports a continuous drain current of 230 A at case temperature and dissipates up to 470 W under thermal constraints. Packaged in a compact PowerFLAT 5x6 format with wettable flanks, it ensures reliable surface-mount installation for high-current applications.
Verify the specific ordering suffix against the official datasheet to confirm package type and tape/reel specifications. Confirm RoHS compliance and Ecopack status directly with the manufacturer or authorized distributors before procurement. Ensure the component matches the required automotive grade and thermal characteristics for the target application environment.
Select this component when designing circuits requiring high current handling in a small footprint. The 60 V rating suits low-voltage automotive buses. Evaluate thermal management requirements given the 470 W dissipation capability. Compare gate charge parameters against driver capabilities to optimize switching losses in high-frequency operation.
This part belongs to the STripFET F6/H6 family of power MOSFETs designed for automotive and industrial markets. It represents a generation of devices optimized for low RDS(on) and high reliability. The PowerFLAT package provides superior thermal dissipation compared to traditional surface-mount options, supporting higher power densities in compact designs.
Check for direct pin-compatible alternatives within the same STMicroelectronics PowerFLAT series. Verify that substitute parts meet the same AEC-Q101 qualification and thermal resistance specifications. Ensure voltage and current ratings exceed the original design margins.