STP35N60DM2

Single FETs, MOSFETs Overview

STP35N60DM2 is an N-channel enhancement mode Power MOSFET from the MDmesh DM2 series, housed in a TO-220 package. It features a maximum drain-source voltage (VDS) of 600 V and a continuous drain current (ID) of 28 A at Tcase = 25 °C. The typical static drain-source on-resistance (RDS(on)) is 0.094 Ω, with a maximum of 0.110 Ω. Total power dissipation (PTOT) reaches 210 W at Tcase = 25 °C. Key electrical parameters include a gate threshold voltage (VGS(th)) ranging from 3 V to 5 V, total gate charge (Qg) of 54 nC, and peak diode recovery voltage slope (dv/dt) of 50 V/ns.

Single FETs, MOSFETs Feature Summary

• Fast-recovery body diode with low reverse recovery charge and time
• Extremely low gate charge and input capacitance for efficient switching
• 100% avalanche tested for robustness under unclamped inductive loads
• Built-in back-to-back Zener diodes for enhanced ESD protection

Single FETs, MOSFETs Applications

• High-efficiency DC-DC converters
• Bridge topologies
• ZVS phase-shift converters

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering code STP35N60DM2 against the manufacturer's official documentation to confirm current production status and exact specifications. Ensure compatibility with TO-220 mounting requirements and thermal management solutions suitable for the specified power dissipation ratings. Cross-reference datasheet revision history for any updates to electrical characteristics or package dimensions before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring high-voltage handling up to 600 V with moderate current capabilities. The low RDS(on) and fast-recovery body diode make it suitable for applications prioritizing efficiency and reduced switching losses. Consider the thermal resistance values when designing heat sinks, as junction-to-ambient resistance impacts performance in free-air environments without forced cooling.

Single FETs, MOSFETs Part Context

The STP35N60DM2 belongs to STMicroelectronics' MDmesh DM2 family, which integrates fast-recovery diode technology with low on-resistance MOSFET structures. This series is engineered for demanding power conversion applications where high dv/dt ruggedness and avalanche capability are critical. The device utilizes silicon technology and is available in through-hole packages for reliable board mounting.

Single FETs, MOSFETs Replacement Considerations

Consult official substitution lists for equivalent parts within the MDmesh DM2 series or other manufacturers offering similar 600 V, 28 A TO-220 MOSFETs. Verify pinout compatibility and ensure that alternative components meet or exceed the required RDS(on), Qg, and thermal performance specifications.

Single FETs, MOSFETs FAQ

What is the purpose of the built-in Zener diodes in the STP35N60DM2?

The built-in back-to-back Zener diodes enhance the electrostatic discharge (ESD) performance of the device, providing internal integrity protection and eliminating the need for additional external components.

How does the body diode of the STP35N60DM2 perform during switching?

The body diode is a fast-recovery type characterized by very low reverse recovery charge (Qrr) and time (trr), which minimizes switching losses and improves efficiency in hard-switching applications.