STP45N10F7

Single FETs, MOSFETs Overview

The STP45N10F7 is an N-channel Power MOSFET from STMicroelectronics, utilizing STripFET F7 technology with an enhanced trench gate structure. It operates at a drain-source voltage of 100 V and delivers a continuous drain current of 45 A. The device features a typical on-state resistance (RDS(on)) of 14.5 Ohm. Packaged in TO-220, it combines low internal capacitance and gate charge for efficient switching with high avalanche ruggedness.

Single FETs, MOSFETs Feature Summary

• Utilizes STripFET F7 technology with an enhanced trench gate structure to achieve very low on-state resistance.
• Reduces internal capacitance and gate charge to enable faster and more efficient switching operations.
• Offers excellent figure of merit (FoM) among the lowest RDS(on) values available.
• Provides high EMI immunity through a low Crss/Ciss ratio and robust avalanche ruggedness.

Single FETs, MOSFETs Applications

• General switching applications requiring high efficiency
• Power conversion circuits benefiting from low gate charge
• Systems demanding high avalanche energy handling

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix and package variant when sourcing, as STMicroelectronics may offer multiple pin configurations or thermal options within the same family. Confirm that the component meets the required RoHS compliance standards for your target market. Check the official datasheet revision history to ensure compatibility with your design specifications, particularly regarding thermal characteristics and absolute maximum ratings.

Single FETs, MOSFETs Selection Notes

Select this component for designs prioritizing low conduction losses and fast switching speeds within a 100 V rating. The STripFET F7 technology provides superior performance compared to standard planar MOSFETs. Ensure the application can accommodate the TO-220 package size and thermal requirements. Evaluate the trade-off between the 14.5 Ohm RDS(on) and the device's cost-effectiveness for medium-current applications.

Single FETs, MOSFETs Part Context

This part belongs to the STripFET F7 series of N-channel Power MOSFETs, designed for low-voltage applications up to 100 V. The series emphasizes reduced on-resistance and improved switching efficiency through advanced trench gate technology. It is positioned alongside other variants like STD45N10F7 and STP100N10F7, offering different current and resistance profiles while maintaining the core benefits of the F7 architecture.

Single FETs, MOSFETs Replacement Considerations

Consider the STD45N10F7 for DPAK packaging alternatives or the STP100N10F7 for higher current capacity in similar TO-220 packages. Verify pinout compatibility and thermal performance before substitution. Ensure the replacement maintains the required 100 V breakdown voltage and avalanche ruggedness specifications.