Single FETs, MOSFETs STP48N30M8 product image

STP48N30M8

  • Description:MOSFET N-CH 300V TO220
  • Series:-
  • Mfr:STMicroelectronics
  • Package:Tube

SKU:2cb32b5457ba Category: Brand:

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STP48N30M8 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists STMicroelectronics. Its product description is MOSFET N-CH 300V TO220. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for STP48N30M8

  • Description:MOSFET N-CH 300V TO220
  • Series:-
  • Mfr:STMicroelectronics
  • Package:Tube
  • FET Type:-
  • Technology:-
  • Drain to Source Voltage (Vdss):-
  • Current - Continuous Drain (Id) @ 25°C:-
  • Drive Voltage (Max Rds On, Min Rds On):-
  • Rds On (Max) @ Id, Vgs:-
  • Vgs(th) (Max) @ Id:-
  • Gate Charge (Qg) (Max) @ Vgs:-
  • Vgs (Max):-
  • Input Capacitance (Ciss) (Max) @ Vds:-
  • FET Feature:-
  • Power Dissipation (Max):-
  • Operating Temperature:-
  • Grade:-
  • Qualification:-
  • Mounting Type:-
  • Supplier Device Package:-
  • Package / Case:-

Single FETs, MOSFETs datasheet and documents for STP48N30M8

STP48N30M8

Single FETs, MOSFETs Overview

The STP48N30M8 is an N-channel Power MOSFET from STMicroelectronics, designed for high-efficiency power switching applications. It features a breakdown voltage of 300 V and a continuous drain current of 48 A at 25 °C. The device utilizes the STripFET M8 technology to achieve low on-resistance and minimized gate charge. Packaged in a TO-220 case, it supports a maximum junction temperature of 175 °C and is 100% avalanche tested for robustness.

Single FETs, MOSFETs Feature Summary

  • Utilizes STripFET M8 technology for optimized input capacitance and gate charge
  • High dv/dt capability for reliable operation in fast-switching environments
  • 100% avalanche tested to ensure ruggedness under transient conditions
  • Supports high-temperature operation with a maximum junction temperature of 175 °C

Single FETs, MOSFETs Applications

  • Primary switch in isolated DC-DC converters
  • Telecommunications power supplies
  • Computer power supply units (PSUs)
  • General-purpose power switching applications requiring low gate drive requirements

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix and package variant against the official STMicroelectronics datasheet before procurement. Ensure the component meets RoHS compliance requirements if specified by your design constraints. Cross-reference the part number with authorized distributors to confirm authenticity and availability status.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits that require a 300 V rating with high current handling capabilities. The low gate charge characteristic makes it suitable for applications where driving efficiency is critical. Consider the thermal performance of the TO-220 package and ensure adequate heatsinking is provided for continuous high-current operation.

Single FETs, MOSFETs Part Context

This part belongs to the STPOWER family of power transistors, which offers a broad range of breakdown voltages from -100 to 1700 V. The STP48N30M8 specifically leverages advanced silicon processes to deliver low on-resistance combined with state-of-the-art packaging solutions for efficient power conversion.

Single FETs, MOSFETs Replacement Considerations

Consult official STMicroelectronics documentation for direct or pin-compatible substitutes. Verify electrical parameters such as Vds, Id, and Rds(on) match or exceed original requirements when evaluating alternative components.

STP48N30M8STP48N30M8

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