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Product Detailed Parameters
- Description：MOSFET 2P-CH 30V 7.2A 8SOP
- Series：-
- Mfr：UMW
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：7.2A (Ta)
- Rds On (Max) @ Id, Vgs：25mOhm @ 7.2A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：24nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：1650pF @ 15V
- Power - Max：2.8W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOP
- Grade：-
- Qualification：-
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Overview
The STP4925A is a dual P-Channel logic enhancement mode power field-effect transistor manufactured by UMW using high cell density DMOS trench technology. Designed for low voltage applications, it features a drain-source voltage of -30V and continuous drain current of -7.2A at 25°C. The device achieves an on-state resistance of 25mΩ at VGS=-10V and 32mΩ at VGS=-4.5V. It operates within a junction temperature range of -55°C to +150°C with a maximum power dissipation of 2.8W at 25°C. The component is housed in a SOP-8 package.
Feature Summary
- Dual P-Channel configuration utilizing high cell density DMOS trench technology
- Optimized for minimal on-state resistance in low voltage environments
- Suitable for high-side switching in battery powered circuits
Applications
- Notebook computer power management
- Low voltage application circuits
- Battery powered circuit designs
Procurement Notes
Verify the specific ordering suffix and tape-and-reel quantity against official distributor catalogs before purchase. Confirm RoHS compliance status directly from the manufacturer's documentation. Ensure the SOP-8 package dimensions match the target PCB footprint requirements. Check for any recent lifecycle changes or obsolescence notices associated with this part number.
Selection Notes
Select this component for designs requiring dual P-Channel switching with low on-resistance characteristics. Verify that the gate drive voltage meets the threshold requirements for full enhancement. Consider thermal management strategies given the specified power dissipation limits in the SOP-8 package. Ensure the operating voltage does not exceed the -30V drain-source breakdown rating.
Part Context
This component belongs to the STP series of dual MOSFETs produced by UMW. It shares the same functional architecture as other devices in the lineup but is distinguished by its specific electrical ratings and packaging. The STP4925A is designed to replace single-channel solutions where space efficiency and dual switching capability are required.
Replacement Considerations
Consult official substitution guides for equivalent dual P-Channel MOSFETs with matching -30V ratings and SOP-8 packages. Verify pin compatibility and thermal resistance values when considering alternative manufacturers.
