STP4NB50

$0.38

Description：MOSFET N-CH 500V 3.8A TO220AB
Series：PowerMESH™
Mfr：STMicroelectronics
Package：Tube

SKU:a226ea7738ac Category: Single FETs, MOSFETs Brand: STMicroelectronics

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Product introduction

STP4NB50 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists STMicroelectronics. Its product description is MOSFET N-CH 500V 3.8A TO220AB. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for STP4NB50

Description：MOSFET N-CH 500V 3.8A TO220AB
Series：PowerMESH™
Mfr：STMicroelectronics
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：500 V
Current - Continuous Drain (Id) @ 25°C：3.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：2.8Ohm @ 1.9A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：21 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：400 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：80W (Tc)
Operating Temperature：150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220
Package / Case：TO-220-3

Single FETs, MOSFETs datasheet and documents for STP4NB50

STP4NB50

Single FETs, MOSFETs Overview

The STP4NB50 is an N-channel PowerMESH MOSFET featuring a 500V drain-source voltage and a maximum on-resistance of 2.8 ohms at 10V gate drive. It supports a continuous drain current of 3.8A in the TO-220 package, with a total power dissipation of 80W at 25°C case temperature. The device includes an intrinsic body diode with a reverse recovery time of 245ns. Key electrical parameters include a gate threshold voltage of 2 to 4V, a total gate charge of 21nC, and avalanche energy capability of 220mJ.

Single FETs, MOSFETs Feature Summary

Utilizes MESH OVERLAY process for low on-resistance per area
Features extremely high dv/dt capability for demanding switching applications
Includes built-in Zener protection for enhanced reliability
100% avalanche tested for robust performance

Single FETs, MOSFETs Applications

High current, high speed switching
Switch mode power supplies (SMPS)
DC-AC converters for welding equipment
Uninterruptible power supplies (UPS)
Motor drive systems

Single FETs, MOSFETs Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels due to obsolete status. Confirm RoHS compliance requirements as the datasheet indicates non-compliance. Ensure thermal management design accounts for the specified junction-to-case resistance values. Validate that the TO-220 package dimensions match your PCB footprint constraints before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring high voltage blocking capability combined with moderate current handling. Consider the specific thermal resistance characteristics when designing heat sinks for continuous operation. Evaluate the gate charge requirements against your driver capabilities to ensure efficient switching speeds. Compare the on-resistance specifications with alternative devices if lower conduction losses are critical for your system efficiency targets.

Single FETs, MOSFETs Part Context

This part belongs to the PowerMESH family from STMicroelectronics, utilizing advanced strip layout technology. It complements other high-voltage MOSFET offerings by providing optimized trade-offs between on-resistance and switching performance. The series is designed for industrial and consumer power conversion applications where reliability and switching speed are paramount.