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STP6NK60Z is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists STMicroelectronics. Its product description is MOSFET N-CH 600V 6A TO220AB. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for STP6NK60Z
- Description：MOSFET N-CH 600V 6A TO220AB
- Series：SuperMESH™
- Mfr：STMicroelectronics
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：1.2Ohm @ 3A, 10V
- Vgs(th) (Max) @ Id：4.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs：46 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：905 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：110W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220
- Package / Case：TO-220-3
Single FETs, MOSFETs datasheet and documents for STP6NK60Z
Single FETs, MOSFETs Overview
The STP6NK60Z is a single N-channel enhancement mode power MOSFET manufactured by STMicroelectronics. It utilizes SuperMESH technology to achieve low on-resistance and high dv/dt capability. The device features an integrated Zener diode for gate protection, ensuring robustness against electrostatic discharge. It is designed for demanding switching applications requiring high voltage tolerance.
Single FETs, MOSFETs Feature Summary
- SuperMESH technology optimization for reduced on-resistance
- Integrated Zener diode for enhanced ESD protection
- High dv/dt capability for demanding applications
- 100% avalanche tested for reliability
Single FETs, MOSFETs Applications
- Switching power supplies
- Motor control circuits
- General purpose switching applications
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix of the ordered part number against the datasheet to confirm package type and pinout compatibility. Ensure that the selected component meets the thermal management requirements of the target application design.
Single FETs, MOSFETs Selection Notes
Select this component when high voltage blocking capability and robust gate protection are required. Consider the thermal resistance characteristics and package limitations during the initial circuit design phase to ensure reliable operation under load conditions.
Single FETs, MOSFETs Part Context
This part belongs to the SuperMESH series of power MOSFETs from STMicroelectronics. The series is characterized by optimized trench gate technology aimed at improving efficiency and switching performance in high-voltage discrete semiconductor applications.
Single FETs, MOSFETs Replacement Considerations
Check for compatible alternatives within the same SuperMESH family or equivalent specifications from other manufacturers. Verify pinout compatibility and electrical parameter margins before substituting.
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