STS1DN45K3

Overview

The STS1DN45K3 is a dual N-channel 450 V SuperMESH3 Power MOSFET in an SO-8 package. It features a maximum drain-source voltage of 450 V, a continuous drain current of 0.5 A at 25 °C, and a typical on-resistance of 3.2 Ω (max 3.8 Ω). The device has a total power dissipation of 1.7 W in dual operation and includes built-in back-to-back Zener diodes for gate protection.

Feature Summary

• SuperMESH3 technology provides extremely low on-resistance and superior dynamic performance through optimized vertical structure improvements.
• Built-in back-to-back Zener diodes enhance ESD capability and safely absorb gate-to-source voltage transients without external components.
• 100% avalanche tested to ensure high avalanche capability suitable for demanding applications.

Applications

• Switching applications

Procurement Notes

This component is marked as obsolete by the manufacturer. Verify availability with distributors as stock may be limited or discontinued. Confirm final specifications against the official datasheet before integration, as preliminary data details are subject to change without notice.

Selection Notes

Select this part for dual-channel switching designs requiring 450 V breakdown and compact SO-8 surface-mount packaging. Ensure thermal management accommodates the 1.7 W dual-operation dissipation limit. Verify that the 3.8 Ω maximum on-resistance meets circuit efficiency requirements.

Part Context

The STS1DN45K3 belongs to the SuperMESH3 series, which improves upon the standard SuperMESH layout with a new optimized vertical structure. This series complements ST's high-voltage MOSFET portfolio, including MDmesh products, targeting applications needing robust dv/dt capability and minimized gate charge.

Replacement Considerations

Check for direct replacements within the STS1DNC45 or STD2NC45-1 families, though pinouts and specific electrical ratings like Rds(on) and Id must be verified against the original design constraints.

FAQ

What is the purpose of the integrated Zener diodes?

The built-in back-to-back Zener diodes protect the gate from electrostatic discharge (ESD) and absorb voltage transients applied between the gate and source, eliminating the need for external protection components.

How does the SuperMESH3 technology differ from previous versions?

SuperMESH3 combines improvements to the strip-based PowerMESH layout with a new optimized vertical structure, resulting in lower on-resistance, better dynamic performance, and higher avalanche capability.

What is the maximum operating junction temperature?

The maximum operating junction temperature (Tj Max) is 150 °C.