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The STS4DPF30L is a dual P-channel enhancement-mode power MOSFET from the STripFET series, manufactured by STMicroelectronics. It features a maximum drain-source voltage of 30 V and a continuous drain current of 4 A. The device utilizes an 8-pin SOIC surface-mount package with dimensions of 5 mm length, 4 mm width, and 1.25 mm height. Key electrical parameters include a maximum on-resistance of 80 mΩ (0.07 Ω), a typical gate charge of 16 nC at 5 V, and a maximum power dissipation of 2 W. The component operates within a temperature range of -55 °C to +150 °C.
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm part number accuracy against official STMicroelectronics documentation. Check for obsolescence status as the component may be out of production. Ensure compliance with RoHS standards if required for specific manufacturing processes. Validate package markings and date codes upon receipt.
Select this component when dual P-channel switching is required within a 30 V system. Consider the 4 A current rating and 80 mΩ on-resistance for thermal management. Evaluate the 8-SOIC package constraints for PCB layout. Compare performance metrics against single-channel alternatives if space allows. Assess operating temperature requirements against the specified -55 °C to +150 °C range.
The STS4DPF30L belongs to the STripFET family of power MOSFETs, designed for high-efficiency switching applications. It integrates two independent P-channel transistors in a compact surface-mount package. This configuration simplifies circuit design for dual-load scenarios. The technology focuses on minimizing conduction losses while maintaining robust switching characteristics.
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with existing circuit designs before considering alternative components. Consult STMicroelectronics technical support for current product line recommendations.