STS5DNF20V

$1.40

Description：MOSFET 2N-CH 20V 5A 8SOIC
Series：STripFET™ II

SKU:3de30fdc7140 Category: FET, MOSFET Arrays Brand: STMicroelectronics

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 20V 5A 8SOIC
Series：STripFET™ II
Mfr：STMicroelectronics
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：20V
Current - Continuous Drain (Id) @ 25°C：5A
Rds On (Max) @ Id, Vgs：40mOhm @ 2.5A, 4.5V
Vgs(th) (Max) @ Id：600mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs：11.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：460pF @ 25V
Power - Max：2W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SOIC
Grade：-
Qualification：-

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STS5DNF20V

Overview

The STS5DNF20V is a dual N-channel Power MOSFET from STMicroelectronics, utilizing the STripFET II technology. It features a low typical on-resistance of 0.030 Ohm and supports a continuous drain current of 5 Amperes with a maximum voltage rating of 20 Volts. The device is housed in an SO-8 package and is designed for efficient 2.7V drive applications.

Feature Summary

Dual N-channel configuration within a single compact package
Low on-resistance for improved power efficiency
Optimized for low-voltage gate drive compatibility

Applications

DC-DC converter circuits
Power management modules
Battery protection systems

Procurement Notes

Verify component authenticity through authorized STMicroelectronics distributors or certified partners. Request original manufacturer datasheets to confirm lot codes and RoHS compliance status. Ensure storage conditions align with semiconductor handling standards to prevent moisture damage prior to soldering.

Selection Notes

Select this component for applications requiring dual N-channel isolation in a small footprint. The 20V rating suits low-voltage logic interfaces. Evaluate thermal dissipation requirements against the 1.6W power limit. Confirm gate drive voltage levels match the 2.7V specification for optimal switching performance.

Part Context

This part belongs to the STripFET II family, representing STMicroelectronics' strip-based process technology. It serves as a high-density solution for space-constrained designs, offering enhanced performance compared to standard discrete MOSFETs while maintaining reliability in industrial and consumer electronics environments.

Replacement Considerations

Consult official cross-reference lists for verified substitutes. Ensure replacement parts maintain identical pinout configurations and electrical ratings. Verify that alternative components support the same SO-8 package dimensions and thermal characteristics.