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Product Detailed Parameters
- Description：MOSFET 2N-CH 60V 5A 8SOIC
- Series：STripFET™ II
- Mfr：STMicroelectronics
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：5A
- Rds On (Max) @ Id, Vgs：45mOhm @ 2A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：15nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：1030pF @ 25V
- Power - Max：2W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The STS5DNF60L is a dual N-channel Power MOSFET from STMicroelectronics, utilizing the STripFET II process. It features a 60V drain-source voltage and a continuous drain current of 5A at 25°C. The device offers a maximum on-resistance of 45mΩ at 10V gate drive. Key electrical parameters include a gate charge of 15nC at 4.5V and an input capacitance of 1030pF at 25V. It operates within a junction temperature range of -55°C to 150°C and is qualified under AEC-Q101 standards for automotive applications.
Feature Summary
- AEC-Q101 qualified for automotive reliability
- STripFET II technology minimizes input capacitance and gate charge
- Exceptional dv/dt capability
- 100% avalanche tested
Applications
- Primary switching in isolated DC-DC converters
- Telecommunications power supplies
- Computer application power systems
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official datasheet to ensure correct packaging and specifications. Confirm that the component meets the required AEC-Q101 automotive grade standards if intended for vehicle electronics. Check RoHS compliance status and moisture sensitivity level prior to integration into the assembly line.
Selection Notes
Select this component when low gate charge and minimized input capacitance are critical for high-efficiency switching performance. The dual N-channel configuration allows for compact layout in bridge or half-bridge topologies. Ensure the driving circuit can support the logic-level gate threshold requirements for optimal conduction characteristics.
Part Context
This part belongs to the STS5DNF60 family of STripFET II Power MOSFETs. It shares the same core technology as variants like the STS4DNF60L but differs in specific current ratings and package configurations. The series is designed for high packing density and rugged avalanche characteristics.
Replacement Considerations
The STS4DNF60L is a documented alternative within the same product family. Verify pin compatibility and electrical parameter alignment before substitution.
