STS5DP3LLH6

$0.23

Description：MOSFET 2P-CH 30V 5A 8SO
Series：DeepGATE™, STripFET™ H6

SKU:e87a4aee985a Category: FET, MOSFET Arrays Brand: STMicroelectronics

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Product introduction

Product Detailed Parameters

Description：MOSFET 2P-CH 30V 5A 8SO
Series：DeepGATE™, STripFET™ H6
Mfr：STMicroelectronics
Package：Tape & Reel (TR),Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 P-Channel (Dual)
FET Feature：Logic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：5A (Ta)
Rds On (Max) @ Id, Vgs：56mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：639pF @ 25V
Power - Max：2.7W
Operating Temperature：150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SO
Grade：-
Qualification：-

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STS5DP3LLH6

Overview

The STS5DP3LLH6 is a dual P-channel Power MOSFET from the STripFET H6 series, designed for surface mount applications. It features a -30 V drain-source voltage and a continuous drain current of -5 A. The device exhibits a typical on-resistance of 48 mΩ with a gate charge of 2.7 nC. Packaged in an SO-8 configuration, it supports a maximum power dissipation of 2.7 W and operates within a temperature range of -55 °C to +150 °C.

Feature Summary

Dual P-channel configuration in a single compact package
Very low on-resistance for efficient power handling
Low gate charge enabling high-speed switching performance
High avalanche ruggedness for robust operation

Applications

General switching applications
Power management circuits
Motor control systems

Procurement Notes

Verify the specific ordering suffix and tape/reel specifications against the official datasheet before procurement. Ensure that the requested component matches the exact STS5DP3LLH6 designation to avoid compatibility issues with existing designs. Confirm compliance requirements such as RoHS status directly with the manufacturer or authorized distributors.

Selection Notes

Select this component when a dual P-channel solution is required in an SO-8 footprint. The STripFET H6 technology offers optimized trade-offs between conduction losses and switching speed. Consider the thermal resistance of the SO-8 package and the need for adequate PCB copper area to manage the 2.7 W power dissipation effectively in the target application.

Part Context

This part belongs to the STripFET H6 family, which utilizes advanced trench gate technology to enhance performance. It serves as a dual-channel alternative to single devices, reducing board space. The series is characterized by improved ruggedness and lower drive power losses compared to previous generations.

Replacement Considerations

Direct substitutes include other dual P-channel MOSFETs in SO-8 packages with similar electrical ratings. Verify pinout compatibility and thermal characteristics before substitution.