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STS5PF30L is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists STMicroelectronics. Its product description is MOSFET P-CH 30V 5A 8SO. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for STS5PF30L
- Description：MOSFET P-CH 30V 5A 8SO
- Series：STripFET™
- Mfr：STMicroelectronics
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：55mOhm @ 2.5A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：16 nC @ 5 V
- Vgs (Max)：±16V
- Input Capacitance (Ciss) (Max) @ Vds：1350 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：2.5W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-SOIC
- Package / Case：8-SOIC (0.154", 3.90mm Width)
Single FETs, MOSFETs datasheet and documents for STS5PF30L
Single FETs, MOSFETs Overview
The STS5PF30L is a P-channel enhancement mode Power MOSFET from the STripFET series by STMicroelectronics. It features a maximum drain-source voltage of 30 V and a continuous drain current of 7 A. The device utilizes an SOIC-8 surface-mount package with 8 pins. Key electrical parameters include a maximum on-resistance of 21 mΩ, a power dissipation rating of 2.5 W, and a gate-source voltage range of -20 V to +20 V. It operates within a temperature range of -55 °C to +150 °C, with a typical gate charge of 28 nC at 4.5 V.
Single FETs, MOSFETs Feature Summary
- Utilizes unique single feature size strip-based process for high packing density
- Provides rugged avalanche characteristics and manufacturing reproducibility
- Features low threshold drive capability for reduced conduction losses
- Designed with standard outline for easy automated surface mount assembly
Single FETs, MOSFETs Applications
- Automated surface mount assembly integration
- Low threshold gate drive applications
- Systems requiring rugged avalanche characteristics
Single FETs, MOSFETs Procurement Notes
Verify the specific part number STS5PF30L against official STMicroelectronics documentation to confirm availability and exact specifications. Ensure compatibility with required voltage and current ratings for the intended circuit design. Cross-reference datasheet details for thermal performance and package dimensions before finalizing procurement decisions.
Single FETs, MOSFETs Selection Notes
Select this component when a P-channel MOSFET with 30 V breakdown and 7 A current capacity is required in an SOIC-8 package. Consider its low on-resistance and enhanced switching characteristics for efficiency. Verify that the operating temperature range and gate drive requirements align with the system constraints.
Single FETs, MOSFETs Part Context
This device belongs to the STripFET family, characterized by advanced strip-based processing technology. It represents a development focused on reducing on-resistance and improving manufacturing consistency through less critical alignment steps. The series emphasizes high packing density and robust performance in surface-mount configurations.
Single FETs, MOSFETs Replacement Considerations
Consult official STMicroelectronics resources for confirmed substitute part numbers. Do not assume cross-compatibility with other manufacturers or different series without verifying electrical and mechanical specifications.
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