STS8C5H30L

$2.10

Description：MOSFET N/P-CH 30V 8A/5.4A 8SOIC
Series：STripFET™ III

SKU:56e7737c48e0 Category: FET, MOSFET Arrays Brand: STMicroelectronics

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Product introduction

Product Detailed Parameters

Description：MOSFET N/P-CH 30V 8A/5.4A 8SOIC
Series：STripFET™ III
Mfr：STMicroelectronics
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：N and P-Channel
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：8A, 5.4A
Rds On (Max) @ Id, Vgs：22mOhm @ 4A, 10V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：10nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds：857pF @ 25V
Power - Max：2W
Operating Temperature：150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SOIC
Grade：-
Qualification：-

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STS8C5H30L

Overview

The STS8C5H30L is a dual N/P-channel MOSFET utilizing STMicroelectronics’ StripFET III technology. It features an 8-pin SOIC surface-mount package. The N-channel section provides a drain-source voltage of 30V, on-resistance of 22mΩ, and continuous current of 8A. The P-channel section offers 30V breakdown, 55mΩ resistance, and 5A current capability. Input capacitance is specified at 857pF. Total power dissipation is rated at 2W.

Feature Summary

Dual configuration integrating N-channel and P-channel transistors in a single compact package
StripFET III process technology designed for low gate charge performance

Applications

DC-DC converter circuits requiring complementary switching
Motor control applications with low voltage requirements
Power management modules needing integrated bidirectional control

Procurement Notes

Verify the specific ordering suffix to ensure compatibility with required tape-and-reel packaging specifications. Confirm that the component meets RoHS compliance standards for your target market. Cross-reference the manufacturer datasheet revision date against your design timeline to ensure parameter stability. Validate thermal resistance values against your PCB layout constraints before finalizing the bill of materials.

Selection Notes

Select this component when space-constrained designs require both N-type and P-type switching capabilities within a single footprint. The low on-resistance characteristics support efficient power handling in low-voltage systems. Ensure the operating temperature range aligns with the application environment. Consider the input capacitance value for high-frequency switching speed requirements in the circuit topology.

Part Context

This device belongs to the StripFET III family of power MOSFETs from STMicroelectronics. These components are engineered for high-density power applications where efficiency and thermal performance are critical. The dual-channel architecture reduces board area compared to discrete solutions. The technology focuses on minimizing internal resistance while maintaining robust switching characteristics.