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Product Detailed Parameters
- Description：MOSFET 2N-CH 60V 8A 8SO
- Series：STripFET™ F6
- Mfr：STMicroelectronics
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：8A (Ta)
- Rds On (Max) @ Id, Vgs：24mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：27nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：1340pF @ 25V
- Power - Max：3.2W
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SO
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The STS8DN6LF6AG is an automotive-grade dual N-channel Power MOSFET developed using STripFET F6 technology with a new trench gate structure. It features very low on-resistance, logic level drive capability, and high avalanche ruggedness. The device is AEC-Q101 qualified for automotive applications. Key electrical parameters include a drain-source voltage (V_DSS) of 60 V, a typical on-resistance (R_DS(on)) of 21 mΩ, and a continuous drain current (I_D) of 8 A. It is housed in an SO-8 package.
Feature Summary
- AEC-Q101 qualified for automotive reliability standards
- Very low on-resistance across all packages
- Logic level gate drive for efficient control
- High avalanche ruggedness
Applications
- Automotive power management systems
- Industrial motor control applications
- Low-side switching circuits
Procurement Notes
Verify the component status as NRND (Not Recommended for New Designs) before procurement. Confirm that the specific suffix LF6AG matches the required RoHS compliance and packaging specifications. Ensure design-in approval is obtained from STMicroelectronics to mitigate long-term supply risks associated with end-of-life products.
Selection Notes
Select this component when automotive qualification and dual N-channel configuration are required within a 60 V system. The 21 mΩ typical R_DS(on) supports efficient power handling at 8 A. Consider the SO-8 package constraints for thermal management and PCB layout requirements compared to higher current alternatives.
Part Context
This part belongs to STMicroelectronics' medium-voltage N-channel MOSFET portfolio, utilizing STripFET F6 technology. It is designed for industrial and automotive applications requiring breakdown voltages between 30 V and 350 V. The family emphasizes low on-resistance and high efficiency through advanced trench gate structures.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. As the device is marked NRND, alternative solutions should be evaluated based on matching V_DSS, R_DS(on), I_D, and package dimensions.
