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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 8A/9A 8SOIC
- Series：STripFET™
- Mfr：STMicroelectronics
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：8A, 9A
- Rds On (Max) @ Id, Vgs：22mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：10nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：857pF @ 25V
- Power - Max：2W
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
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Overview
The STS9D8NH3LL is a dual N-channel Power MOSFET from the STripFET series, manufactured by STMicroelectronics. It integrates two independent N-channel transistors in an 8-pin SOIC surface-mount package. The device features a drain-source breakdown voltage of 30V and supports continuous drain currents of 8A and 9A for its respective channels. It exhibits a low on-resistance of 0.012 Ohm, optimized for efficient power management. The component utilizes advanced design rules to balance gate charge and on-state performance, suitable for compact circuit designs requiring reliable switching capabilities.
Feature Summary
- Integrates two N-channel MOSFETs in a single surface-mount package
- Utilizes STripFET technology for optimized gate charge and on-resistance
- Designed for high-performance power management applications
Applications
- Compact power supply circuits
- DC-DC converter modules
- Battery protection systems
Procurement Notes
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm part status as obsolete when planning long-term production. Ensure storage conditions comply with moisture sensitivity levels specified in the official datasheet. Cross-reference pinout configurations with schematic requirements before integration to prevent installation errors.
Selection Notes
Select this component for applications requiring dual N-channel switching within a limited footprint. Evaluate thermal dissipation requirements given the 2W power rating and SOIC package constraints. Compare gate charge specifications against drive capability limitations. Consider the 30V voltage rating relative to system operating voltages to ensure adequate safety margins during transient events.
Part Context
This device belongs to the STripFET family, characterized by advanced silicon design rules. It serves as a dual-array solution replacing discrete components, reducing board space. The 8-pin SOIC form factor enables automated surface-mount assembly. Integration of two channels allows synchronized control in bridge or half-bridge topologies.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation. Due to the obsolete status, verify compatibility with alternative dual N-channel MOSFETs offering similar 30V ratings and SOIC packaging.
