STSA851

Single Bipolar Transistors Overview

The STSA851 is a low-voltage, fast-switching NPN power bipolar junction transistor manufactured by STMicroelectronics. It utilizes silicon planar technology and is housed in a TO-92 through-hole package. Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 60 V, a collector-base voltage (VCBO) of 150 V, and an emitter-base voltage (VEBO) of 7 V. The device supports a maximum DC collector current of 5 A with a power dissipation rating of 1.1 W. It features a gain-bandwidth product (fT) of 130 MHz and a minimum DC current gain (hFE) of 150. The maximum operating temperature is +150°C.

Single Bipolar Transistors Feature Summary

• Fast-switching capability optimized for high-frequency applications
• Low saturation voltage for efficient power handling
• Robust thermal performance with high maximum junction temperature

Single Bipolar Transistors Applications

• Emergency lighting systems
• General-purpose switching circuits
• Power regulation modules

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix to confirm package type and tape/reel configuration, as variations exist within the STSA851 family. Confirm RoHS compliance status directly with the manufacturer or authorized distributor prior to procurement. Ensure that the selected variant matches the required mounting style and thermal characteristics for the intended application environment.

Single Bipolar Transistors Selection Notes

Select the STSA851 when a NPN transistor with 60 V VCEO and 5 A continuous current capability is required in a TO-92 package. Consider the 130 MHz transition frequency for switching speed requirements. Evaluate the 1.1 W power dissipation limit against thermal management constraints. Compare against similar NPN power transistors if higher voltage ratings or different packaging formats are necessary for the design.

Single Bipolar Transistors Part Context

The STSA851 belongs to STMicroelectronics' portfolio of low-voltage fast-switching NPN power transistors. It is designed for applications requiring reliable switching performance in compact through-hole packages. The device complements other BJT offerings by providing a balance of current handling and switching speed suitable for consumer electronics and industrial control systems.

Single Bipolar Transistors Replacement Considerations

Publicly confirmed substitute part numbers are not explicitly listed in the provided documentation. Verify compatibility with direct replacements based on matching VCEO, IC, and package dimensions.