STU10P6F6

Single FETs, MOSFETs Overview

The STU10P6F6 is a P-channel Power MOSFET manufactured by STMicroelectronics, utilizing STripFET™ F6 technology with a new trench gate structure. It features a drain-source voltage (Vds) of -60 V and a typical on-resistance (Rds(on)) of 0.13 Ohm at -10 A. The device operates within a temperature range of -55 °C to +175 °C, with a power dissipation of 35 W. Key electrical parameters include a gate charge of 6.4 nC, input capacitance of 340 pF, and switching times of 5.3 ns rise and 3.7 ns fall. It is housed in a TO-251-3 (DPAK) package.

Single FETs, MOSFETs Feature Summary

• Developed using STripFET™ F6 technology for optimized performance
• Features a new trench gate structure for low on-resistance
• High thermal stability with operation up to +175 °C

Single FETs, MOSFETs Applications

• Power management circuits
• DC-DC converters
• Motor control applications

Single FETs, MOSFETs Procurement Notes

Verify the specific package variant, as STU10P6F6 typically denotes the TO-251-3 (DPAK) through-hole version, distinct from surface-mount variants like STD10P6F6. Confirm datasheet revisions and RoHS compliance status directly with the manufacturer or authorized distributors before procurement. Ensure ordering suffixes match the required packaging format.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring robust P-channel switching with high thermal endurance. The low Rds(on) minimizes conduction losses, while the high junction temperature rating supports demanding environments. Compare against similar STripFET F6 devices if different package constraints or current ratings are needed.

Single FETs, MOSFETs Part Context

This part belongs to STMicroelectronics' STripFET™ F6 family of P-channel Power MOSFETs. These devices are designed for efficiency and reliability in power switching applications. The STU10P6F6 specifically targets through-hole mounting requirements, offering a balance of low on-resistance and high voltage capability within the DPAK form factor.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes may include other STMicroelectronics P-channel MOSFETs with similar -60 V and 0.13 Ohm specifications, such as STD10P6F6 (surface mount equivalent). Verify pinout compatibility and thermal characteristics when cross-referencing.