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STW27NM60ND is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists STMicroelectronics. Its product description is MOSFET N-CH 600V 21A TO247-3. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for STW27NM60ND
- Description：MOSFET N-CH 600V 21A TO247-3
- Series：FDmesh™ II
- Mfr：STMicroelectronics
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：21A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：160mOhm @ 10.5A, 10V
- Vgs(th) (Max) @ Id：5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±25V
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：160W (Tc)
- Operating Temperature：150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Through Hole
- Supplier Device Package：TO-247-3
- Package / Case：TO-247-3
Single FETs, MOSFETs datasheet and documents for STW27NM60ND
Single FETs, MOSFETs Overview
The STW27NM60ND is an N-channel enhancement mode MOSFET from the MDmesh series, featuring a 600 V drain-source breakdown voltage and a continuous drain current of 21 A. It utilizes a TO-247 package for through-hole mounting. Key electrical parameters include a maximum on-resistance of 165 mΩ at 10 V gate drive, a typical gate charge of 60 nC, and a power dissipation rating of 140 W. The device operates within a temperature range of -55°C to 150°C.
Single FETs, MOSFETs Feature Summary
- MDmesh technology provides low input capacitance and reduced gate charge for efficient switching performance.
Single FETs, MOSFETs Applications
- High-frequency power conversion circuits
- Motor control applications
- Industrial power supplies
Single FETs, MOSFETs Procurement Notes
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm lot codes and date codes against current production status. Ensure packaging integrity matches specified requirements. Cross-reference datasheet revisions to confirm parameter consistency. Validate compliance with relevant regional regulatory standards prior to integration.
Single FETs, MOSFETs Selection Notes
Select this component for designs requiring robust high-voltage handling with moderate current capacity. The TO-247 package facilitates effective thermal management via heatsink attachment. Evaluate thermal resistance characteristics against system heat dissipation capabilities. Consider gate charge specifications when designing driver circuits for optimal switching efficiency.
Single FETs, MOSFETs Part Context
This part belongs to STMicroelectronics' MDmesh family of power MOSFETs, designed for general-purpose switching applications. The series emphasizes improved figure-of-merit through optimized cell architecture. It serves as a discrete solution for medium-power electronics where reliability and switching speed are critical design factors.
Single FETs, MOSFETs Replacement Considerations
STW27NM60ND is marked as obsolete. Potential substitutes include APT34M60B from Microchip Technology. Verify pinout compatibility and electrical parameter alignment before substitution.
Single FETs, MOSFETs FAQ
What is the maximum drain-source voltage rating?
The maximum drain-source breakdown voltage (Vds) is 600 V.
Which package type does this component use?
It uses a TO-247 package suitable for through-hole installation.
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