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STW34NM60N is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists STMicroelectronics. Its product description is MOSFET N-CH 600V 29A TO247-3. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for STW34NM60N
- Description：MOSFET N-CH 600V 29A TO247-3
- Series：MDmesh™ II
- Mfr：STMicroelectronics
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：29A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：105mOhm @ 14.5A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：80 nC @ 10 V
- Vgs (Max)：±25V
- Input Capacitance (Ciss) (Max) @ Vds：2722 pF @ 100 V
- FET Feature：-
- Power Dissipation (Max)：250W (Tc)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-247-3
- Package / Case：TO-247-3
Single FETs, MOSFETs datasheet and documents for STW34NM60N
Single FETs, MOSFETs Overview
STW34NM60N is an N-channel enhancement-mode Power MOSFET from the MDmesh series. It features a maximum drain-source voltage of 600 V and a continuous drain current of 29 A. The device has a typical on-resistance of 105 mΩ and a maximum power dissipation of 210 W. It operates within a temperature range of -55°C to 150°C, with a gate-source voltage limit of ±25 V.
Single FETs, MOSFETs Feature Summary
- Utilizes MDmesh technology for low on-resistance and gate charge
- High efficiency suitable for demanding high-efficiency converters
- 100% avalanche tested for ruggedness
Single FETs, MOSFETs Applications
- High-efficiency DC-DC converters
- Power conversion applications
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix (e.g., STW34NM60ND) against official datasheets to confirm package variations or parameter tolerances. Ensure compatibility with TO-247 through-hole mounting requirements. Confirm RoHS compliance status as per the latest manufacturer documentation before procurement.
Single FETs, MOSFETs Selection Notes
Select this component for designs requiring 600 V blocking capability with moderate current handling. Consider thermal management due to the 210 W power dissipation rating. Verify that the gate drive circuitry supports the required threshold voltage and charge characteristics for optimal switching performance.
Single FETs, MOSFETs Part Context
The STW34NM60N belongs to STMicroelectronics' MDmesh family of N-channel Power MOSFETs. This series combines vertical structure with strip layout to achieve low on-resistance and gate charge. It is designed for high-efficiency power conversion applications where switching losses are critical.
Single FETs, MOSFETs Replacement Considerations
STP34NM60ND is a documented alternative in the same family, offering similar electrical characteristics in a TO-220 package. Verify pinout compatibility and thermal resistance differences when substituting.
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