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STWA30N65DM6AG is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists STMicroelectronics. Its product description is MOSFET N-CH 650V 28A TO247. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for STWA30N65DM6AG
- Description：MOSFET N-CH 650V 28A TO247
- Series：-
- Mfr：STMicroelectronics
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：650 V
- Current - Continuous Drain (Id) @ 25°C：28A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：110mOhm @ 14A, 10V
- Vgs(th) (Max) @ Id：4.75V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：46 nC @ 10 V
- Vgs (Max)：±25V
- Input Capacitance (Ciss) (Max) @ Vds：2000 pF @ 100 V
- FET Feature：-
- Power Dissipation (Max)：284W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Through Hole
- Supplier Device Package：TO-247 Long Leads
- Package / Case：TO-247-3
Single FETs, MOSFETs datasheet and documents for STWA30N65DM6AG
Single FETs, MOSFETs Overview
STWA30N65DM6AG is an automotive-grade N-channel Power MOSFET from the MDmesh DM6 series, housed in a TO-247 long leads package. It features a drain-source breakdown voltage of 650 V and a continuous drain current of 28 A at 25 °C case temperature. The device has a maximum static drain-source on-resistance of 110 mΩ and a total power dissipation of 284 W at 25 °C. Key electrical parameters include a gate threshold voltage ranging from 3.25 V to 4.75 V, a total gate charge of 46 nC, and a peak diode recovery voltage slope of 100 V/ns.
Single FETs, MOSFETs Feature Summary
- AEC-Q101 qualified for automotive reliability
- Fast-recovery body diode with low reverse recovery charge
- Extremely high dv/dt ruggedness and Zener protection
- Lower RDS(on) per area compared to previous generations
Single FETs, MOSFETs Applications
- High-efficiency bridge topologies
- ZVS phase-shift converters
- General switching applications
Single FETs, MOSFETs Procurement Notes
Verify component authenticity through authorized STMicroelectronics distributors or official sales offices. Confirm that the received parts match the marking '30N65DM6' and the package type TO-247 long leads. Ensure compliance with ECOPACK environmental specifications as defined by the manufacturer. Check for any specific ordering suffixes if required by your supply chain protocols.
Single FETs, MOSFETs Selection Notes
Select this component for designs requiring robust automotive-grade performance and high-voltage handling. The MDmesh DM6 technology offers improved switching efficiency and reduced conduction losses compared to prior iterations. Consider the thermal resistance values when designing heat sinks, noting the junction-to-case resistance is 0.44 °C/W. Evaluate the gate charge requirements against your driver capabilities to optimize switching speeds.
Single FETs, MOSFETs Part Context
The STWA30N65DM6AG belongs to the MDmesh DM6 family of high-voltage N-channel Power MOSFETs. This series is engineered for demanding power conversion applications, combining fast-recovery diode characteristics with optimized on-resistance. The TO-247 long leads package provides mechanical stability and efficient thermal management for through-hole mounting solutions.
Single FETs, MOSFETs Replacement Considerations
Direct substitutes within the same MDmesh DM6 family include STWA68N65DM6AG and STWA75N60DM6, though their electrical ratings differ significantly. Verify pinout compatibility and thermal interface requirements before swapping components. Consult the official datasheet for detailed parameter comparisons to ensure circuit functionality remains intact.
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