STWA32N65DM6AG

Single FETs, MOSFETs Overview

STWA32N65DM6AG is an automotive-grade N-channel enhancement-mode Power MOSFET from the MDmesh DM6 series. It features a 650 V drain-source voltage (Vds) and a maximum continuous drain current (Id) of 32 A at 25°C. The device offers a typical on-resistance (Rds(on)) of 83 mΩ. It is housed in a TO-247 long lead package with three pins. Key electrical parameters include a gate threshold voltage of 4.75 V, a maximum gate-source voltage (Vgs) of ±25 V, and a total gate charge (Qg) of 118 nC at Vgs=10 V. The component supports a maximum power dissipation of 480 W and operates within a junction temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

• AEC-Q101 qualified for automotive reliability
• Fast-recovery body diode with low reverse recovery charge
• High dv/dt ruggedness for noise immunity
• Zener-protected gate structure

Single FETs, MOSFETs Applications

• On-board chargers (OBC)
• DC-DC converters
• High-efficiency bridge topologies
• ZVS phase-shift converters

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'AG' indicates RoHS compliance and automotive qualification status as per the official datasheet. Confirm the TO-247 long lead package dimensions match your PCB footprint requirements. Ensure thermal management solutions account for the 480 W power dissipation rating under appropriate mounting conditions. Cross-reference the exact part number with STMicroelectronics documentation to confirm availability and revision level.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring high-voltage blocking capability and robust switching performance in automotive environments. The MDmesh DM6 technology provides improved Rds(on) per area compared to previous generations. Consider the TO-247 long lead package for through-hole mounting and effective heat sinking. Evaluate the fast-recovery body diode characteristics if synchronous rectification or freewheeling functions are required in the circuit design.

Single FETs, MOSFETs Part Context

The STWA32N65DM6AG belongs to the MDmesh DM6 family of super-junction power MOSFETs designed by STMicroelectronics. This series targets high-efficiency power conversion systems, particularly those operating at 600 V and 650 V levels. The devices are engineered to minimize switching losses and conduction losses, making them suitable for demanding industrial and automotive power electronics applications where reliability and efficiency are critical.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes within the same series include STWA30N65DM6AG and STWA46N65DM6AG, which share similar electrical characteristics and packaging but differ in current ratings and on-resistance values. Verify pinout compatibility and thermal resistance specifications when considering alternative part numbers from the MDmesh DM6 lineup.