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SUD35N05-26L-E3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 55V 35A TO252. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for SUD35N05-26L-E3
- Description：MOSFET N-CH 55V 35A TO252
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：55 V
- Current - Continuous Drain (Id) @ 25°C：35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：20mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：1V @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs：13 nC @ 5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：885 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：7.5W (Ta), 50W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-252AA
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
Single FETs, MOSFETs datasheet and documents for SUD35N05-26L-E3
Single FETs, MOSFETs Overview
The SUD35N05-26L-E3 is an N-channel enhancement mode MOSFET from the Vishay Siliconix EL-Series. It features a maximum drain-source voltage (Vds) of 55 V and a continuous drain current (Id) of 35 A at case temperature. The device utilizes TO-220AB packaging for through-hole installation. Key electrical parameters include a maximum on-resistance (Rds(on)) of 14 mΩ, a gate threshold voltage range of 2 V to 4 V, and a maximum power dissipation of 175 W. The component operates within a junction temperature range of -55 °C to +175 °C.
Single FETs, MOSFETs Feature Summary
- High current handling capability with 35 A continuous drain rating
- Ultra-low on-resistance for efficient power switching
- Extended operating temperature range up to 175 °C
- Through-hole TO-220AB package for robust mounting
Single FETs, MOSFETs Applications
- DC-DC converter circuits
- Synchronous rectification modules
- Motor control systems
- Power supply output stages
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix 'E3' confirms lead-free and RoHS compliance status against the manufacturer's latest documentation. Confirm the package variant matches the required thermal and mechanical specifications for the target PCB layout. Ensure the voltage and current ratings align with the system's peak operational demands to maintain reliability margins.
Single FETs, MOSFETs Selection Notes
Select this component for applications requiring high efficiency in low-voltage, high-current environments. The low Rds(on) minimizes conduction losses, improving overall system efficiency. The TO-220AB package facilitates effective heat dissipation through heatsinking. Consider the 175 °C junction temperature rating for operation in elevated ambient conditions without derating.
Single FETs, MOSFETs Part Context
This part belongs to the Vishay Siliconix EL-Series, designed for general-purpose power switching. It complements other N-channel MOSFETs in the portfolio by offering a balance of low on-resistance and high current capacity in a standard through-hole package. The series targets cost-sensitive applications requiring reliable performance in power conversion topologies.
Single FETs, MOSFETs Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source data. Verify pinout compatibility and thermal characteristics when evaluating alternative components from other manufacturers.
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