SUD50N06-08H-E3

Description：MOSFET N-CH 60V 93A TO252
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR)

SKU:50f119e78d2c Category: Single FETs, MOSFETs Brand: Vishay Siliconix

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Product introduction

SUD50N06-08H-E3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 60V 93A TO252. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SUD50N06-08H-E3

Description：MOSFET N-CH 60V 93A TO252
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：93A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：7.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：145 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：7000 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：3W (Ta), 136W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-252AA
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

Single FETs, MOSFETs datasheet and documents for SUD50N06-08H-E3

SUD50N06-08H-E3

Single FETs, MOSFETs Overview

The SUD50N06-08H-E3 is an N-channel vertical DMOS transistor from Vishay Siliconix, utilizing TrenchFET technology. It features a 60V drain-source voltage rating and a continuous drain current of 93A at case temperature. The device offers a maximum on-resistance of 7.8mΩ at 10V gate drive. It is housed in a DPAK (TO-252) package with a power dissipation capacity of 136W. The component operates within a junction temperature range of -55°C to +175°C.

Single FETs, MOSFETs Feature Summary

TrenchFET technology for optimized performance
High current handling capability
Low on-resistance design

Single FETs, MOSFETs Applications

DC-DC converters
Motor control circuits
Power switching applications

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'E3' confirms lead-free status and RoHS compliance per the manufacturer datasheet. Confirm the package type matches the required PCB footprint. Check for any recent Product Change Notices (PCN) regarding manufacturing site changes or parameter updates before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component when a low Rds(on) value is critical for efficiency in high-current applications. Ensure the thermal management solution supports the 136W dissipation rating at the expected case temperature. Verify that the gate drive voltage meets the 10V requirement for optimal conduction characteristics.

Single FETs, MOSFETs Part Context

This part belongs to the SUD50 series of N-channel MOSFETs. It is designed for general-purpose power switching. The series utilizes advanced trench gate technology to achieve low figure-of-merit values. It serves as a standard discrete power transistor option for Vishay's portfolio.