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SUM70N03-09CP-E3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 30V 70A TO263. Review the specifications below when checking this part for your BOM.
The SUM70N03-09CP-E3 is a Vishay Siliconix N-channel Power MOSFET utilizing TrenchFET technology, housed in a TO-263 (D2PAK) package. It features a drain-source voltage of 30 V and a continuous drain current of 70 A at 25 °C case temperature. The device exhibits a maximum on-state resistance of 0.0095 Ω at VGS = 20 V and 0.014 Ω at VGS = 4.5 V. Maximum power dissipation is 93 W at TC = 25 °C, with an operating junction temperature range from -55 °C to 175 °C.
Verify the exact ordering suffix against official documentation to confirm lead-free status and specific package variant. Confirm availability through authorized distributors as manufacturing capabilities may vary by location. Validate all electrical parameters for your specific application requirements before procurement.
Select this component for designs requiring robust N-channel switching with low on-resistance at 30 V. Ensure thermal management aligns with the specified junction-to-case thermal resistance. Verify gate drive voltages meet the thresholds for optimal conduction characteristics.
This part belongs to the SUM series of Vishay Siliconix N-channel MOSFETs. It utilizes TrenchFET technology to achieve enhanced performance metrics compared to standard planar devices. The TO-263 package provides efficient heat dissipation for surface-mount implementations.
SUM70N03-09P-E3
The maximum operating junction temperature is 175 °C.
Yes, the datasheet explicitly lists synchronous rectifiers as a primary application.
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