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SUP60N10-18P-E3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 100V 60A TO220AB. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for SUP60N10-18P-E3
- Description：MOSFET N-CH 100V 60A TO220AB
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：8V, 10V
- Rds On (Max) @ Id, Vgs：18.3mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id：4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：75 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2600 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：3.75W (Ta), 150W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220AB
- Package / Case：TO-220-3
Single FETs, MOSFETs datasheet and documents for SUP60N10-18P-E3
Single FETs, MOSFETs Overview
The Vishay Siliconix SUP60N10-18P-E3 is a single N-channel Power MOSFET belonging to the SUM series. It utilizes TrenchFET technology and is housed in a TO-263 (D2PAK) package for through-hole or surface-mount installation. The device features a drain-source breakdown voltage of 100 V and a continuous drain current rating of 60 A. Its maximum on-resistance is specified at 18 milliohms, with a gate-source voltage limit of ±20 V. Thermal performance includes a power dissipation capacity of 154 W, operating within a temperature range from -55 °C to +175 °C junction temperature.
Single FETs, MOSFETs Feature Summary
- Employs TrenchFET technology for optimized low on-resistance and fast switching characteristics.
- Designed for high-efficiency power switching applications requiring robust thermal management.
- Features a rugged TO-263 package suitable for automated assembly processes.
Single FETs, MOSFETs Applications
- DC-DC converters
- Synchronous rectification circuits
- Power distribution networks
Single FETs, MOSFETs Procurement Notes
Verify component authenticity by checking manufacturer markings against official datasheets. Confirm RoHS compliance status via the specific manufacturing lot code. Ensure storage conditions prevent moisture absorption prior to soldering. Validate package integrity upon receipt to avoid mechanical damage during transit.
Single FETs, MOSFETs Selection Notes
Select this component when a 100 V rating and 60 A current capability are required. The 18 milliohm on-resistance supports efficient conduction in low-voltage high-current designs. Consider the TO-263 footprint for board space constraints compared to larger packages.
Single FETs, MOSFETs Part Context
This part belongs to the Vishay SUM series of N-channel enhancement mode field effect transistors. The series is characterized by advanced trench gate technology designed to minimize conduction losses while maintaining reliable switching performance in various power electronics configurations.
Single FETs, MOSFETs Replacement Considerations
Officially recommended alternatives include the SUM60N10-30-E3 and SUM60N10-17-E3. Verify pinout compatibility and electrical parameter tolerances before substituting these variants in existing circuit designs.
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