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SUP85N15-21-E3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 150V 85A TO220AB. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for SUP85N15-21-E3
- Description：MOSFET N-CH 150V 85A TO220AB
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：150 V
- Current - Continuous Drain (Id) @ 25°C：85A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：21mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：110 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：4750 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：2.4W (Ta), 300W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220AB
- Package / Case：TO-220-3
Single FETs, MOSFETs datasheet and documents for SUP85N15-21-E3
Single FETs, MOSFETs Overview
The Vishay Siliconix SUP85N15-21-E3 is a lead-free N-channel TrenchFET power MOSFET rated for 150 V drain-source voltage and 85 A continuous drain current. It features a maximum on-state resistance of 0.021 Ω at VGS = 10 V and supports junction temperatures up to 175 °C. The component utilizes a TO-220AB package with the drain connected to the tab, providing a thermal resistance from junction to case of 0.4 °C/W.
Single FETs, MOSFETs Feature Summary
- TrenchFET technology enables high-speed switching performance and low gate charge characteristics.
- Enhanced thermal management capabilities support operation at elevated junction temperatures up to 175 °C.
- Robust avalanche energy rating ensures reliability under inductive load switching conditions.
Single FETs, MOSFETs Applications
- Primary side switch applications
- High-efficiency DC-to-DC converters
- Power factor correction circuits
Single FETs, MOSFETs Procurement Notes
Verify that the ordering suffix -E3 confirms lead-free terminations and RoHS compliance before procurement. Confirm the specific revision status of datasheet document number 72003 to ensure alignment with current manufacturing specifications. Ensure the TO-220AB package dimensions match the target PCB footprint requirements.
Single FETs, MOSFETs Selection Notes
Select this component when designs require a balance of low conduction losses and high thermal tolerance. The 150 V breakdown voltage provides adequate margin for standard bus voltages. Evaluate the total gate charge against driver capabilities to optimize switching speed and minimize transition losses during operation.
Single FETs, MOSFETs Part Context
This device belongs to the Vishay Siliconix SUx85Nxx series of N-channel MOSFETs. It represents an evolution in TrenchFET technology designed to reduce on-resistance while maintaining robust avalanche ruggedness. The product line targets high-power density applications requiring efficient thermal dissipation through direct die attachment to the package tab.
Single FETs, MOSFETs Replacement Considerations
SUP85N15-21 (Lead-containing version)
Single FETs, MOSFETs FAQ
What is the maximum operating junction temperature?
The maximum operating junction temperature is 175 °C.
How is the drain terminal configured in the package?
The drain is electrically connected to the metal tab of the TO-220AB package.
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