SVC234-TB-E

SVC234-TB-E

$0.16
  • Description:FM VARICAP TWIN VR 6.5V
  • Series:-

SKU:0c5c27b4a470 Category: Brand:

  
  • Quantity
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Product Detailed Parameters

  • Description:FM VARICAP TWIN VR 6.5V
  • Series:-
  • Mfr:onsemi
  • Package:Bulk
  • Capacitance @ Vr, F:16.03pF @ 6.5V, 1MHz
  • Capacitance Ratio:4.9
  • Capacitance Ratio Condition:C1/C6.5
  • Voltage - Peak Reverse (Max):16 V
  • Diode Type:1 Pair Common Cathode
  • Q @ Vr, F:60 @ 3V, 100MHz
  • Operating Temperature:125°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:3-CP

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SVC234-TB-E

Overview

The SVC234-TB-E is a dual FM varicap diode manufactured by onsemi, designed for frequency modulation applications. It features a maximum reverse voltage of 16V and operates at a junction temperature up to 125°C. The device provides a capacitance of 16.03pF at 6.5V reverse bias measured at 1MHz, with a quality factor of 60 at 3V and 100MHz. Packaged in the 3-CP surface mount format, this component delivers a wide capacitance ratio suitable for stable high-voltage operation in RF circuits.

Feature Summary

  • Dual varactor structure providing wide capacitance ratio for FM applications
  • Surface mount 3-CP package design minimizing footprint
  • High junction temperature rating supporting elevated thermal environments

Applications

  • Frequency modulation (FM) transmitter circuits
  • RF tuning and oscillator modules
  • Consumer electronics requiring compact RF components

Procurement Notes

Verify the specific datasheet version when sourcing, as technical parameters such as capacitance tolerance and Q-factor limits may vary between manufacturing lots. Confirm that the 3-CP package dimensions align with your PCB layout requirements before finalizing procurement orders to ensure mechanical compatibility.

Selection Notes

Select this component when a dual varactor configuration is required for FM signal generation. Ensure the operating voltage remains within the 16V reverse limit. Consider the 125°C junction temperature capability if the application involves significant self-heating or high ambient temperatures compared to standard silicon devices.

Part Context

This part belongs to onsemi’s discrete semiconductor product line, specifically categorized under variable capacitance diodes. It serves as a specialized passive-active hybrid component for radio frequency engineering, distinct from the company's power MOSFETs and image sensor families.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation. Designers should consult official distributor databases for cross-reference data based on electrical equivalence.

SVC234-TB-ESVC234-TB-E
$0.16
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