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The SVC321SPA-A-3 is a variable capacitance diode manufactured by onsemi, formerly Sanyo Semiconductor. It is designed for applications requiring voltage-controlled tuning. The device features a silicon construction with a common cathode configuration containing two elements within a single package. Key electrical parameters include a nominal diode capacitance of 32 pF and a minimum breakdown voltage of 12 V. The component utilizes a plastic/epoxy body in an R-PSIP-W3 inline wire terminal form factor.
Verify the manufacturer origin as onsemi, noting the historical Sanyo Semiconductor branding often found in legacy documentation. Confirm the specific suffix A-3 corresponds to the standard packaging and material composition defined in official datasheets. Ensure compatibility with existing board layouts regarding the R-PSIP-W3 package dimensions and pinout arrangement before procurement.
Select this component when a dual-element varactor with a nominal 32 pF capacitance at zero bias is required. The 12 V breakdown voltage rating must align with the maximum reverse voltage expected in the application circuit. Consider the common cathode topology if shared ground references are preferred in the schematic design over independent element configurations.
This part belongs to the SVC series of variable capacitance diodes originally developed by Sanyo Semiconductor. Following onsemi's acquisition of Sanyo's semiconductor business, these components are now managed under the onsemi portfolio. The series is characterized by hyperabrupt or linear capacitance-voltage characteristics suitable for analog RF applications.
Direct replacements may include other dual-element common cathode varactors from manufacturers like Vishay or NXP. Verify that substitute parts match the 32 pF nominal capacitance and 12 V minimum breakdown voltage specifications. Package compatibility with the R-PSIP-W3 form factor should be confirmed for drop-in replacement scenarios.