T1G4020036-FL

Overview

The Qorvo T1G4020036-FL is a discrete GaN on SiC HEMT operating from DC to 3.5 GHz with a 50V supply rail. It delivers 2 x 200 W (P3dB) output power and features wideband input pre-matching. The device utilizes the NI-650 process technology for high efficiency and reliability. It is housed in an industry-standard air cavity package designed for robust thermal management and ease of integration into high-power RF systems.

Feature Summary

• Discrete GaN on SiC HEMT construction
• Wideband input pre-matched design
• Industry-standard air cavity packaging

Applications

• High-power RF amplification
• Broadband communication infrastructure
• Electronic warfare systems

Procurement Notes

Verify the specific manufacturing lot and date code upon receipt to ensure component authenticity and traceability. Confirm that the received units match the exact T1G4020036-FL designation, as variations may exist within broader product families. Ensure handling procedures comply with electrostatic discharge protocols required for sensitive semiconductor devices.

Selection Notes

Select this component for applications requiring high linearity and power density across a wide frequency range up to 3.5 GHz. The pre-matched input simplifies circuit design by reducing external matching network complexity. Consider the air cavity package for superior heat dissipation compared to standard surface-mount options in high-power scenarios.

Part Context

This part belongs to Qorvo's NI-650 series of Gallium Nitride on Silicon Carbide transistors. The series is engineered for demanding RF applications where performance and reliability are critical. The T1G4020036-FL represents a high-power variant optimized for broadband operations, leveraging advanced material properties for enhanced efficiency.

Replacement Considerations

No public confirmed substitute part numbers are available.