T2G4005528-FS

$192.43

Description：DC-3.5 GHZ, 55W, 28V GAN RF PWR
Series：-

SKU:fe713c07bc41 Category: RF FETs, MOSFETs Brand: Qorvo

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Product introduction

Product Detailed Parameters

Description：DC-3.5 GHZ, 55W, 28V GAN RF PWR
Series：-
Mfr：Qorvo
Package：Tray
Technology：GaN
Frequency：3.5GHz
Gain：16dB
Voltage - Test：-
Current Rating (Amps)：20A
Noise Figure：-
Current - Test：-
Power - Output：55W
Voltage - Rated：28 V
Grade：-
Qualification：-
Mounting Type：Surface Mount
Package / Case：2L-FLG
Supplier Device Package：2L-FLG
Configuration：N-Channel

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T2G4005528-FS

Overview

The Qorvo T2G4005528-FS is a discrete Gallium Nitride on Silicon Carbide (GaN) High Electron Mobility Transistor (HEMT). It operates from DC to 3.5 GHz with a 28V supply rail. The device delivers an output power of 55 W at P3dB and provides a linear gain exceeding 15 dB at 3.5 GHz. Constructed in a flangeless package, it is designed for wideband applications requiring high power density.

Feature Summary

Discrete GaN on SiC HEMT technology
Wideband operation from DC to 3.5 GHz
Flangeless package construction

Applications

RF power amplifier design
Broadband communication systems
Military radar transmitters

Procurement Notes

Verify the specific suffix against official Qorvo documentation to confirm exact mechanical dimensions and pinout configuration. Ensure compatibility with existing thermal management solutions due to the flangeless package style. Confirm RoHS compliance status through the manufacturer's latest certification records before finalizing procurement specifications.

Selection Notes

Select this component for designs requiring wideband coverage up to 3.5 GHz with high power output. Evaluate thermal dissipation requirements carefully given the 55W capability and flangeless form factor. Ensure the driving circuit can support the necessary bias conditions for optimal linearity and efficiency across the specified frequency range.

Part Context

This part belongs to Qorvo's portfolio of discrete RF power transistors. It utilizes advanced GaN-on-SiC technology to achieve superior performance compared to traditional silicon-based devices. The product line targets high-efficiency amplification needs in demanding RF environments.

Replacement Considerations

Consult Qorvo's official substitution guide for verified alternatives. Cross-reference pinouts and thermal characteristics when considering competitors' parts.