T2G6003028-FL

T2G6003028-FL

$267.84
  • Description:DC-6 GHZ,30W, 28V GAN RF POWER X
  • Series:-

SKU:b01d247cb237 Category: Brand:

  
  • Quantity
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Product Detailed Parameters

  • Description:DC-6 GHZ,30W, 28V GAN RF POWER X
  • Series:-
  • Mfr:Qorvo
  • Package:Tray
  • Technology:HEMT
  • Frequency:6GHz
  • Gain:14dB
  • Voltage - Test:28 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:200 mA
  • Power - Output:30W
  • Voltage - Rated:100 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:2L-FLG
  • Supplier Device Package:-
  • Configuration:P-Channel

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T2G6003028-FL

Overview

The T2G6003028-FL is a Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) manufactured by Qorvo. It operates within a DC to 6 GHz frequency range and delivers a typical output power of 30 Watts at a drain voltage of 28 Volts. The device utilizes a flangeless package design, facilitating integration into high-power RF applications requiring efficient thermal management and compact form factors.

Feature Summary

  • Utilizes GaN HEMT technology for high-efficiency RF amplification
  • Designed for broadband operation from DC up to 6 GHz
  • Flangeless package configuration for flexible mounting

Applications

  • Military radar systems
  • Electronic warfare platforms
  • Satellite communication transmitters

Part Context

This component belongs to the T2G6003028 series of GaN FETs. The suffix 'FL' denotes the specific flangeless package variant, distinguishing it from other packaging options within the same electrical performance family.

T2G6003028-FLT2G6003028-FL
$267.84
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