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The T2G6003028-FL is a Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) manufactured by Qorvo. It operates within a DC to 6 GHz frequency range and delivers a typical output power of 30 Watts at a drain voltage of 28 Volts. The device utilizes a flangeless package design, facilitating integration into high-power RF applications requiring efficient thermal management and compact form factors.
This component belongs to the T2G6003028 series of GaN FETs. The suffix 'FL' denotes the specific flangeless package variant, distinguishing it from other packaging options within the same electrical performance family.