SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The T2G6003028-FS is a Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) manufactured by Qorvo. It operates within a DC to 6.0 GHz frequency range and delivers a rated output power of 30 Watts at a drain voltage of 28 Volts. The device utilizes a Ni-200 flangeless package, designed for robust thermal management in high-power RF applications. As an active component, it supports RoHS compliance standards and exhibits moisture sensitivity, requiring appropriate handling protocols during assembly.
Verify the specific datasheet revision and pinout configuration against the official Qorvo documentation before integration. Confirm that the Ni-200 flangeless package dimensions match the mechanical constraints of the heat sink interface. Ensure proper electrostatic discharge precautions are observed due to the moisture sensitivity classification of the semiconductor die.
Select this component when designing broadband power amplifiers requiring 30W output at 28V bias. The flangeless form factor necessitates careful PCB or chassis thermal design to ensure adequate heat dissipation. Evaluate the impedance matching network requirements across the full DC-to-6GHz bandwidth to maintain stability and efficiency targets.
This part belongs to Qorvo's T2G series of GaN RF power transistors, which are engineered for defense and aerospace markets. The series provides solutions for mission-critical systems where size, weight, and power efficiency are paramount. These devices leverage advanced epitaxial growth processes to achieve high breakdown voltages and electron mobility.
Consult Qorvo official substitution guides for compatible alternatives. Verify electrical parameter equivalence and mechanical footprint compatibility before considering any cross-reference parts.