T2G6003028-FS

T2G6003028-FS

$673.37
  • Description:DC-6 GHZ,30W,28V GAN RF PWR TR
  • Series:-

SKU:7de5e3c88718 Category: Brand:

  
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Product Detailed Parameters

  • Description:DC-6 GHZ,30W,28V GAN RF PWR TR
  • Series:-
  • Mfr:Qorvo
  • Package:Tray
  • Technology:HEMT
  • Frequency:6GHz
  • Gain:14dB
  • Voltage - Test:28 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:200 mA
  • Power - Output:30W
  • Voltage - Rated:100 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:2L-FLG
  • Supplier Device Package:-
  • Configuration:P-Channel

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T2G6003028-FS

Overview

The T2G6003028-FS is a Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) manufactured by Qorvo. It operates within a DC to 6.0 GHz frequency range and delivers a rated output power of 30 Watts at a drain voltage of 28 Volts. The device utilizes a Ni-200 flangeless package, designed for robust thermal management in high-power RF applications. As an active component, it supports RoHS compliance standards and exhibits moisture sensitivity, requiring appropriate handling protocols during assembly.

Feature Summary

  • Utilizes GaN HEMT technology for high-efficiency RF power amplification
  • Features a flangeless Ni-200 package for direct thermal interface mounting
  • Supports wideband operation from DC up to 6.0 GHz

Applications

  • Military radar systems
  • Electronic warfare platforms
  • Satellite communication transmitters

Procurement Notes

Verify the specific datasheet revision and pinout configuration against the official Qorvo documentation before integration. Confirm that the Ni-200 flangeless package dimensions match the mechanical constraints of the heat sink interface. Ensure proper electrostatic discharge precautions are observed due to the moisture sensitivity classification of the semiconductor die.

Selection Notes

Select this component when designing broadband power amplifiers requiring 30W output at 28V bias. The flangeless form factor necessitates careful PCB or chassis thermal design to ensure adequate heat dissipation. Evaluate the impedance matching network requirements across the full DC-to-6GHz bandwidth to maintain stability and efficiency targets.

Part Context

This part belongs to Qorvo's T2G series of GaN RF power transistors, which are engineered for defense and aerospace markets. The series provides solutions for mission-critical systems where size, weight, and power efficiency are paramount. These devices leverage advanced epitaxial growth processes to achieve high breakdown voltages and electron mobility.

Replacement Considerations

Consult Qorvo official substitution guides for compatible alternatives. Verify electrical parameter equivalence and mechanical footprint compatibility before considering any cross-reference parts.

T2G6003028-FST2G6003028-FS
$673.37
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